Influence of Sulfur Content in Zn(O,S) Buffer Layer onto Copper Indium Gallium Sulfur-Based Solar Cells Through Surface Engineering at ZnO1−xSx/CIGS Interface

Armel Ignace N’guessan,Amal Bouich,Abdoulaye Touré,Bernabé Mari Soucasse,Donafologo Soro

DOI: https://doi.org/10.1007/s11837-023-06018-8

2023-08-11

JOM

Abstract:Copper indium gallium sulfur (CIGS) solar cells show good efficiency; however, the buffer/absorber and absorber/back contact interfaces are the most critical factors affecting that efficiency. We have investigated CIGS-based solar cells with two different buffer layers, ZnO 1− x S x and SnS 2 , a non-toxic alternative to CdS using a solar cell capacitance simulator. First, we propose a cell structure with a ZnO 1− x S x /CIGS interface for different sulfur content in ZnO 1− x S x . The band gap of ZnO 1− x S x and the conduction band offset (∆ E c ) at the ZnO 1− x S x /CIGS interface can be tuned by the sulfur content, enabling high efficiency. We found that the ZnO 1− x S x buffer layer with a sulfur composition S/(O + S) ratio of 0.85 leads to enhanced performance of CIGS solar cells up to 23.94%. Above 0.85, the performance of the solar cells is affected, depending on its thickness and the carrier concentration of both absorber and buffer layers. The CIGS solar cell performance was evaluated using SnS 2 as a buffer layer. The results show that the efficiency of CIGS-based solar cells with Zn(O 0.30 S 0.79 ) and with SnS 2 is slightly different, at 23.54% and 23.44%, respectively. In addition, there is a difference in the open-circuit voltage ( V oc ) and short-circuit current density ( J sc ) due to the reduction in the interface recombination and band structure at the buffer/CIGS interface.

materials science, multidisciplinary,metallurgy & metallurgical engineering,mining & mineral processing,mineralogy