Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Unravelling the Data Retention Mechanisms under Thermal Stress on 2D Memristors

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

On the switching mechanism and optimisation of ion irradiation enabled 2D $MoS_2$ memristors

Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO2-based RRAM devices

Low-Power Memristor Based on Two-Dimensional Materials

A stochastic simulation method for the assessment of resistive random access memory retention reliability

Kinetic Monte Carlo simulation of resistive switching and filament growth in electrochemical RRAMs

Understanding the Resistive Switching Mechanism of 2-D RRAM: Monte Carlo Modeling and a Proposed Application for Reliability Research

Recent advances in memristors based on two-dimensional ferroelectric materials

A Physical Based 2D Monte Carlo Simulation of MO-ECRAM Programming for Device Optimization

A Novel Multiscale Simulation Framework for Low-Dimensional Memristors

Memristors for Memory and Computing Applications

Event-Based Simulation of Stochastic Memristive Devices for Neuromorphic Computing

Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors

Molecular Dynamics Study of the Switching Mechanism of Carbon-Based Resistive Memory

Resistive Switching Memristor: On the Direct Observation of Physical Nature of Parameter Variability

Investigation of Retention Behavior of TiO x /Al 2 O 3 Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule

Probing Electrochemistry at the Nanoscale: in Situ TEM and STM Characterizations of Conducting Filaments in Memristive Devices

A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by Kmc Simulation

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

Thermal Induced Retention Degradation of RRAM-based Neuromorphic Computing Chips