Abstract:Color-mixed (cm) light-emitting diodes (LEDs) are theoretically the most efficient white light emitters, projected to improve white light luminous efficacy by 34% compared to incumbent phosphor converted LEDs. Since white light technology is globally pervasive and essential, small improvements in LED technology can result in energy savings. However, cm-LEDs are not yet realized due to poor efficacy in green and amber emitting materials, a spectral region colloquially referred to as the green gap. ZnGeN2 is nearly isostructural and closely lattice-matched to GaN and can be heteroepitaxially integrated with existing GaN devices; ZnGeN2/GaN hybrid structures are theorized to emit green (∼530 nn) light with a spontaneous emission rate 4.6-4.9 times higher than traditional InGaN LEDs when incorporated into III-N LED structures. In this report we demonstrate the molecular beam epitaxy (MBE) growth of GaN and ZnGeN2 superlattices, an important step towards realizing multiple quantum well structures required for efficient LEDs. Elemental analysis, including atom probe tomography, shows that Ga and Ge are observed in both ZnGeN2 and GaN layers, degrading the structural uniformity. The lack of elemental abruptness also leads to increased defect luminescence and reabsorption of band edge luminescence. The source of unintentional Ga distributed throughout the ZnGeN2 layers was identified as excess flux escaping from around the closed MBE shutter. The source of unintentional Ge, which tended to incorporate as a single delta-doped layer in GaN, was identified as Ge riding along the cyclical metal-rich Ga adlayer used for high quality GaN, incorporating during subsequent nitrogen-rich growth step. Modifying the growth strategy results in improved structural quality, elemental abruptness, and luminescence response. This realization of structurally and elementally abrupt interfaces demonstrates the potential of heteroepitaxially integrated binary and ternary nitrides for energy-relevant devices.

Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides

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AC-Driven Multicolor Electroluminescence from a Hybrid WSe2 Monolayer/AlGaInP Quantum Wells Light-Emitting Device

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Heterogeneous Integration of Microscale GaN Light‐Emitting Diodes and Their Electrical, Optical, and Thermal Characteristics on Flexible Substrates

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Detach GaN-Based Film to Realize a Monolithic Bifunctional Device for Both Lighting and Detection

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Large-Area Organic-Transition Metal Dichalcogenide Hybrid Light-Emitting Device

Tunable Electroluminescence from N-Zncdo/p-gan Heterojunction

Hybrid Cyan Nitride/Red Phosphors White Light-Emitting Diodes with Micro-Hole Structures

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide

Hybrid GaN LED with capillary-bonded II–VI MQW color-converting membrane for visible light communications

Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Electric field induced strong enhancement of electroluminescence in multi-Layer MoS2

Efficient cathodoluminescence of monolayer transitional metal dichalcogenides in a van der Waals heterostructure