Millimeter-Wave Band Electro-Optical Imaging System Using Polarization CMOS Image Sensor and Amplified Optical Local Oscillator Source

Ryoma Okada,Maya Mizuno,Tomoaki Nagaoka,Hironari Takehara,Makito Haruta,Hiroyuki Tashiro,Jun Ohta,Kiyotaka Sasagawa

DOI: https://doi.org/10.3390/s24134138

IF: 3.9

2024-06-27

Sensors

Abstract:In this study, we developed and demonstrated a millimeter-wave electric field imaging system using an electro-optic crystal and a highly sensitive polarization measurement technique using a polarization image sensor, which was fabricated using a 0.35-μm standard CMOS process. The polarization image sensor was equipped with differential amplifiers that amplified the difference between the 0° and 90° pixels. With the amplifier, the signal-to-noise ratio at low incident light levels was improved. Also, an optical modulator and a semiconductor optical amplifier were used to generate an optical local oscillator (LO) signal with a high modulation accuracy and sufficient optical intensity. By combining the amplified LO signal and a highly sensitive polarization imaging system, we successfully performed millimeter-wave electric field imaging with a spatial resolution of 30×60 μm at a rate of 1 FPS, corresponding to 2400 pixels/s.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation

What problem does this paper attempt to address?

The paper is primarily dedicated to developing a millimeter-wave electric field imaging system capable of efficiently and high-resolution imaging of electromagnetic fields within the millimeter-wave band. Specifically, the paper addresses the following key issues:

1. **Problems with traditional measurement methods**: Traditional millimeter-wave measurement methods typically use antennas or coil probes, which are invasive and have limitations in near-field measurements. Additionally, these methods often require long scanning times (e.g., 40 minutes to 2 hours), making real-time assessment impossible.

2. **Improving imaging speed and sensitivity**: Previous studies have achieved electric field imaging, but the imaging speed was slow (about 3 pixels/second). Methods based on photonic crystals and image sensors can achieve high-speed imaging, but due to the optical limitations of image sensors leading to a low upper limit of light intensity, the sensitivity is not high.

To address the above issues, this study proposes the following key technical points:

- **New imaging system**: The paper develops a millimeter-wave electric field imaging system based on photonic crystals and highly sensitive polarization measurement technology. The system uses a polarization image sensor with a differential amplifier manufactured by standard CMOS process, and an optical modulator and semiconductor optical amplifier for generating optical local oscillator signals with sufficient intensity and high modulation accuracy.

- **Improving sensitivity**: By using a dual polarizer structure and integrated differential amplifier to improve signal detection performance, the system's sensitivity range is enhanced.

- **Improving imaging speed**: By combining the above technologies and optimized design, an imaging rate of 2400 pixels per second (1 FPS) is achieved, corresponding to a spatial resolution of 30×60 micrometers.

- **Experimental validation**: The study also demonstrates the ability to image the electric field distribution of actual millimeter-wave sources (such as 28 GHz microstrip lines and 30 GHz patch antennas) and compares the imaging performance under different modulation methods, proving the effectiveness and superiority of the proposed system.

In summary, the main goal of this paper is to develop a technology capable of quickly and accurately measuring the electric field distribution within the millimeter-wave band, overcoming the problems of traditional measurement methods, and improving imaging speed and sensitivity.