Abstract:A wavelength‐selective artificial vision system based on intrinsic defect semiconductor In2S3 transistor is reported. The device exhibits excellent photodetection capability and fast response time at a wavelength of 359 nm. Neuromorphic visual sensor with integrated sensing, memory, and computing is successfully demonstrated at a wavelength of 671 nm, exhibiting highly parallel processing of large‐scale information. With the rapid developments of Artificial Intelligence (AI) and the Internet of Things (IoT), increasingly intricate and expanding application scenarios are placing higher demands on current machine vision capabilities. Therefore, there is a pressing need to simultaneously achieve diverse functionalities, simple designs, and efficient computing in vision devices. Here, the study develops a two‐terminal optoelectronic device utilizing a single 2D intrinsic defect semiconductor In2S3. The device demonstrates wavelength‐selective photodetection and neuromorphic visual capabilities, attributed to defect‐related charge‐trapping/de‐trapping processes. As a photodetector, the device exhibits a high photoresponsivity of 473.6 A W−1, a high external quantum efficiency of 1.6 × 105%, and a fast rise/fall time of 0.3/1.4 ms at the wavelength of 359 nm. As an all‐in‐one neuromorphic visual device, optoelectronic‐driven fundamental synaptic functions, including paired‐pulse facilitation (PPF), short‐term plasticity (STP), long‐term plasticity (LTP), and "learning‐experience", are successfully mimicked at the wavelength of 671 nm. Moreover, one‐shot recognition of the 12‐letter image "SHAN XI NORMAL" is achieved through an artificial convolutional neural network. This study provides a new strategy for developing compact high‐level intelligence systems for complex application scenarios.

Intrinsic Vacancy in 2D Defective Semiconductor In2S3 for Artificial Photonic Nociceptor

Wavelength‐Selective Photodetector and Neuromorphic Visual Sensor Utilizing Intrinsic Defect Semiconductor

Optoelectronic transistor based on InSe/MoS<sub>2</sub> heterostructure for multimodal nociceptor

Optoelectronic transistor based on InSe/MoS2 heterostructure for multimodal nociceptor

Perovskite/Organic Semiconductor-Based Photonic Synaptic Transistor for Artificial Visual System.

Photogated Synaptic Transistors Based on the Heterostructure of 4H-Sic and Organic Semiconductors for Neuromorphic Ultraviolet Vision

Flexible Vertical Photogating Transistor Network with an Ultrashort Channel for In‐Sensor Visual Nociceptor

Precise Synthesis and Broadband Photoresponse of Two‐Dimensional Intrinsic Vacancy Semiconductor

Flexible Optical Synapses Based on In2Se3/MoS2 Heterojunctions for Artificial Vision Systems in the Near-Infrared Range.

Nonlayered Two-Dimensional Defective Semiconductor Γ-Ga2s3 Toward Broadband Photodetection

An Optical Artificial Synapse Based on Single‐Crystal Se‐Vacancy Bi2O2Se

Flexible Optical Synapses Based on In 2 Se 3 /MoS 2 Heterojunctions for Artificial Vision Systems in the Near-Infrared Range

A visible light-triggered artificial photonic nociceptor with adaptive tunability of threshold

Intrinsic Defect‐Driven Synergistic Synaptic Heterostructures for Gate‐Free Neuromorphic Phototransistors

Monolithic 2D Perovskites Enabled Artificial Photonic Synapses for Neuromorphic Vision Sensors

Simulating and Implementing Broadband van der Waals Artificial Visual Synapses Based on Photoconductivity and Pyroconductivity Mechanisms

Embedded Hybrid-Dimensional Heterointerface for Filament Modulation in 2D Material-Based Artificial Nociceptor

Optoelectronic Synaptic Transistors Based on Solution-Processable Organic Semiconductors and CsPbCl3 Quantum Dots for Visual Nociceptor Simulation and Neuromorphic Computing.

Ultra-Sensitive Broadband Photoresponse Realized in Epitaxial Snse/Inse/Gan Heterojunction for Light Adaptive Artificial Optoelectronic Synapses

Charge transport and extrinsic absorption of two-dimensional defect-rich ZnIn2S4 semiconductor for below-bandgap photodetection

Retinomorphic Photonic Synapses for Mimicking Ultraviolet Radiation Sensing and Damage Imaging (Adv. Funct. Mater. 23/2024)