Flexible Vertical Photogating Transistor Network with an Ultrashort Channel for In‐Sensor Visual Nociceptor

Guangdi Feng,Jie Jiang,Yanran Li,Dingdong Xie,Bobo Tian,Qing Wan
DOI: https://doi.org/10.1002/adfm.202104327
IF: 19
2021-06-24
Advanced Functional Materials
Abstract:<p>Humans can clearly perceive surroundings efficiently while consuming little energy because of human intelligence and powerful vision system. Thus, it has been a long-sought dream for human beings to build such an energy-efficient artificial intelligent vision system with emerging devices. Unfortunately, a wearable optoelectronic device for visual nociceptor systems, regarded as a key bionic function to protect the vision, remains to be developed so far. Herein, using the vertical coplanar-multiterminal flexible transient photogating transistor network with a 3 nm ultrashort channel, a wearable artificial vision system with painful-perceptual abilities is successfully demonstrated for flexible electronic-skin (e-skin) applications. The device not only has the ability of ultrafast transient physical disappearance of only 60 s for information security but also establishes a flexible optical in-sensor visual nociceptor (ISVN) e-skin. The optical transition from short-time memory to long-time memory of visual memory is educed by a strong photogating effect, and the higher-level-graded optical painful alarm-sensing system is also demonstrated by this flexible artificial e-skin. Moreover, the proposed devices will achieve painful light sensitization under different spatiotemporal color patterns to avoid external secondary injuries. It provides a good opportunity for future intelligent e-skin taking advantage of its intriguing visual pain-perceptual abilities.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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