Effect of annealing temperature on bismuth vanadate nano thin films for solar cell applications

Dev Bahadur Khadka,Suresh Sagadevan,Shinya Kato,Tetsuo Soga
DOI: https://doi.org/10.1016/j.physb.2024.415878
IF: 2.988
2024-03-24
Physica B Condensed Matter
Abstract:Bismuth vanadate (BiVO 4 ) has been a promising material used as the photoanode electrodes in ferroelectric solar cells owing to its unique combination of properties: a narrow bandgap among ferroelectrics, economic viability, negative conduction band edge, and remarkable stability. The present work explores the fabrication and characterization of BiVO 4 thin films prepared via spin coating, with a specific focus on elucidating the influence of the annealing temperature (400–550 °C) on their structural, optical and photovoltaic properties. From X-ray diffraction (XRD) analysis, it is observed that higher annealing temperatures have promoted the formation of larger grains, enhanced crystallinity, and induced a preferred crystal orientation characteristic of the monoclinic scheelite structure. Tauc plot analysis shows the dependence of the optical band gap on the annealing temperature for BiVO 4 thin films. The band gap values have decreased slightly from 2.50 eV at 400 °C to 2.44 eV at 550 °C. This is indicated by the slightly narrowed bandgap that higher annealing temperatures may influence the structure of the material or defect states. A narrower bandgap allows for the absorption of lower-energy light, potentially improving the light absorption efficiency of BiVO 4 thin films in photoanode applications. The influence of annealing temperature on BiVO4 thin film solar cell performance was investigated further through the analysis of open-circuit voltage (V oc ), short-circuit current (I Sc ) and power conversion efficiency.
physics, condensed matter
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