Abstract:Publication date: 19 May 2023 Source: Key Engineering Materials Vol. 945 Author(s): Dong Yang, Stephan Wirths, Lars Knoll, Yi Han, Dan Mihai Buca, Qing Tai Zhao SiC gate-all-around (GAA) nanowire (NW) MOSFET is one of the most promising device architectures for the next generation of SiC power MOSFETs. This work reveals the great application potential of vertical SiC GAA NW power MOSFETs via TCAD simulation. The investigated devices show higher channel electron mobility (μch) and larger channel carrier density (nch) compared to the conventional SiC power MOSFET. Scaling down of NW diameter (DNW) is beneficial in terms of both, lowering channel resistance (Rch) via improving nch and, increasing breakdown voltage (Vb) by modifying electric field distribution. Low specific-on resistance (Ron,sp) of about 0.68 mΩ∙cm2 for 1 kV SiC MOSFET is shown as possible. However, scaling down the DNW below 100 nm causes an undesirable increase in Ron,sp due to the unscalable device area which is limited by the vertical gate wrapping stacks. The study on device scaling where the NW diameter (DNW) varies from 500 nm to 25 nm provides valuable design considerations for the device's performance. Finally, a top-down process has been developed for the device fabrication. Vertical SiC NWs with an aspect ratio of 10 are formed by an optimized micro-trench free dry etching process.

Demonstration of SiC Trench Gate MOSFETs with Narrow Cell Pitch Using Source Self-Aligned Process

A Fully Self-Aligned SiC Trench MOSFET with 0.5 μm Channel Pitch

High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application.

A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique

Double-self-aligned Short-Channel Power DMOSFETs in 4H-Sic

Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs

Demonstrating SiC In Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

Keynote; Material Challenges and Opportunities in Ge/III-V Channel MOSFETs

Suppression of Parasitic Jfet Effect in Trench Igbts by Using A Self-Aligned P Base Process

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure

Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs

Implementation of a short channel (0.3 μm) for 4H-SiC MOSFETs with deep P-well using ‘channeling’ implantation

A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM

Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion Implantation

Improved Blocking and Switching Characteristics of Split-Gate 1.2kV 4H-SiC MOSFET with a Deep P-well

Design of 1.2 kV SiC trench MOSFET using tilted ion implantation for suppression of electric field crowding at the bottom of the gate oxide

Demonstration of SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate and investigation of the short-channel effects

Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation

Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field