Abstract:After the successful introduction as a replacement for the SiO2 gate dielectric in metal-oxide-semiconductor field-effect transistors, HfO2 is currently one of the most studied binary oxide systems with ubiquitous applications in nanoelectronics. For years, the interest of microelectronic downscaling has focused on tuning the dielectric constant of HfO2, particularly for monoclinic and tetragonal phases. Recently, Müller et al. showed the occurrence of ferroelectricity in orthorhombic HfO2 obtained by doping with Si, Y or Al which can alter the centrosymmetric atomic structure of the elemental binary oxide. Ferroelectric HfO2 is characterized by a permanent electric dipole that can be reversed through the application of an external voltage. As all ferroelectrics, a strong coupling between the polarization and the deformation exists, a property which has allowed the development of piezoelectric sensors and actuators. However, ferroelectrics also show a coupling between the electrical polarization and the deformation gradient, defined as flexoelectricity. In essence, the free charge inside the material redistributes in response to strain gradients, inducing a net non-zero dipole moment, eventually reaching polarization reversal by the sole application of a mechanical stress. Here we show the flexoelectric effect in Al-doped hafnium oxide, using the tip of an atomic force microscope (AFM) to maximize the strain gradient at the nanometre scale. Our analysis indicates that pure mechanical force can be used for the local polarization control of sub-100 nm domains. Due to the full compatibility of HfO2 in the modern CMOS process, the discovery of flexoelectricity in hafnia paves the way for (1) nanoscopic memory bits that can be written mechanically and read electrically, (2) tip-induced reprogrammable ferroelectric-based logic and (3) electromechanical transducers.

Enhanced pyroelectric response at morphotropic and field-induced phase transitions in ferroelectric hafnium oxide thin films

Anomalous polarization-switching phenomena and noteworthy pyroelectricity in ferroelectric Hf0.5Zr0.5O2 polycrystalline films

Ferroelectricity in hafnium oxide thin films

Robust Ferroelectricity in HfO2-based Bulk Crystals Via Polymorphic Engineering

Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films

Phase transitions in HfO2 probed by first-principles computations

Ultralarge polarization in ferroelectric hafnia-based thin films

Atomic Visualization of the Phase Transition in Highly Strained BiFeO3 Thin Films with Excellent Pyroelectric Response

Ferroelectricity in the Al doped HfO2

Electric field cycling behavior of ferroelectric hafnium oxide

Progress in computational understanding of ferroelectric mechanisms in HfO 2

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Exploring Nanoscale Ferroelectricity in Doped Hafnium Oxide by Interferometric Piezoresponse Force Microscopy

Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

Voltage Programmable Pyroelectric Sensors with ZrO 2 -based Antiferroelectrics

Ferroelectricity in Hafnia: The Origin of Nanoscale Stabilization

Flexoelectricity in Amorphous Hafnium Oxide (HfO2)

Temperature‐Dependent Phase Transitions in HfxZr1‐xO2 Mixed Oxides: Indications of a Proper Ferroelectric Material

Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

High-Performing Self-Powered Photosensing and Reconfigurable Pyro-photoelectric Memory with Ferroelectric Hafnium Oxide

The flexoelectric effect in Al-doped hafnium oxide