Abstract:The scaling of bulk Si-based transistors has reached its limits, while novel architectures such as FinFETs and GAAFETs face challenges in sub-10 nm nodes due to complex fabrication processes and severe drain-induced barrier lowering (DIBL) effects. An effective strategy to avoid short-channel effects (SCEs) is the integration of low-dimensional materials into novel device architectures, leveraging the coupling between multiple gates to achieve efficient electrostatic control of the channel. We employed TCAD simulations to model multi-gate FETs based on various dimensional systems and comprehensively investigated electric fields, potentials, current densities, and electron densities within the devices. Through continuous parameter scaling and extracting the sub-threshold swing (SS) and DIBL from the electrical outputs, we offered optimal MoS2 layer numbers and single-walled carbon nanotube (SWCNT) diameters, as well as designed structures for multi-gate FETs based on monolayer MoS2, identifying dual-gate transistors as suitable for high-speed switching applications. Comparing the switching performance of two device types at the same node revealed CNT's advantages as a channel material in mitigating SCEs at sub-3 nm nodes. We validated the performance enhancement of 2D materials in the novel device architecture and reduced the complexity of the related experimental processes. Consequently, our research provides crucial insights for designing next-generation high-performance transistors based on low-dimensional materials at the scaling limit.

Novel Channel-First Fishbone FETs With Symmetrical Threshold Voltages and Balanced Driving Currents Using Single Work Function Metal Process

Investigation of Fabricated CMOS FishboneFETs and TreeFETs with Strained SiGe Nano-fins on Bulk-Si Substrate

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Lateral Ge/Sige/Si Hetero-Channel P-Type Mosfets

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length

Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

Self-aligned Multi-Channel Silicon Nanowire Field-Effect Transistors

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Scallop-shaped p-type FinFETs with improved short-channel effects immunity and driving current

Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node From Device to Circuit

Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched $\textit{V}_{\text{T}}$ by Band Alignments of Individual Channels

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)

Vertical Sandwich GAA FETs with Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate from Top-Down Approach: Simulation and Fabrication

Vertical N-Type and P-Type Nanosheet FETs with C-Shaped Channel

Channel-bias-controlled Reconfigurable Silicon Nanowire Transistors Via an Asymmetric Electrode Contact Strategy

Vertical Sandwich Gate-All-Around Field-Effect Transistors with Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology