Investigating the Planarization of Al0.5CoCrFeNi2 High-Entropy Thin Films Through Chemical Mechanical Polishing

Chih-Chen Lee,Chung-Yu Lee,Shao-Fu Chang,Shih-Hsun Chen
DOI: https://doi.org/10.1007/s44210-023-00016-w
2023-05-24
High Entropy Alloys & Materials
Abstract:High-entropy alloys (HEAs) exhibit a variety of characteristics and provide industries with more options in high-end applications, as HEAs differ from the design concept of conventional alloys. In semiconductor manufacturing processes, HEAs are potential candidates for diffusion barrier layers due to their sluggish diffusion behavior. As a functional interlayer inside three-dimensional integrated circuits (3D-ICs), this material should be prepared as a thin-film with wafer-level flatness. Chemical mechanical polishing (CMP) is a common process used to planarize ICs; however, very little literature has reported its development in complex alloys, and CMP has not been applied to HEAs. In this study, Al 0.5 CoCrFeNi 2 HEA was prepared as thin films of different crystallinities to investigate the effects of CMP operation parameters in planarizing these complex concentrated alloys. The HNO 3 -based slurry mainly causes the oxidation of Ni, Cr, and Fe in HEA films and then causes the film surface to soften, creating a surface more conducive to mechanical grinding. Both chemical and mechanical forces can enhance the material removal rate (MRR) in the CMP process; more importantly, a moderate rotation speed of 40 rpm and a low down force of 50 g/cm 2 are necessary to achieve nanoscale flatness. Additionally, a useful prediction relationship, the Preston equation, for the CMP process applied to HEA systems was established.
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