Abstract:The possibility of using calibrated static random-access memory (SRAM) memory for the quantification of neutron fluence in a radiotherapy facility for cancer treatment utilizing a high-energy 15-MV photon beam (Bremsstrahlung) from an electron linear accelerator has been exploited in this work. This has been performed by varying the field size of the photon beam and the positioning of the SRAM memory at three different positions in relation to the isocenter of the beam. The measurements demonstrated that neutrons originating from interactions between the high-energy photons and accelerator parts with high-Z materials are able to induce single-event upsets (SEUs) in the SRAM memory, where the measured SEUs depend on the measurement location. Monte Carlo (MC) simulations have been performed to retrieve the neutron fluence under each investigated measurement condition. Using the simulated neutron fluence differential in energy and the interactions cross sections determined previously, the expected SEUs were computed. The comparison between measured and simulated SEUs normalized to the linear accelerators (linac) output shows acceptable agreement within the experimental uncertainties. As exposure to secondary neutrons poses a risk to all patients, especially the ones with pacemakers or other electronical aids, the feasibility of establishing the neutron fluence through SEU quantification in an SRAM device provides new opportunities to estimate the associated risk in a clinical environment. Further work can be performed to investigate the correlation between the high-Z linac components and the neutron fluence during patient irradiation to better comprehend the variation between different linac types and manufacturers.

Secondary Particles Generated by Protons in 3-D nand Flash Memories

Single Event Upset on Static Random Access Memory Devices Due to Spallation, Reactor, and Monoenergetic Neutrons

Feasibility of a neutron detector-dosemeter based on single-event upsets in dynamic random-access memories

Single-Event Upsets in SRAMs with Scaling Technology Nodes Induced by Terrestrial, Nuclear Reactor, and Monoenergetic Neutrons

SEU in SRAMs Due to 2.5 MeV, 14 MeV and Reactor Neutrons

Impact of Coulomb elastic scattering of protons and iron ions on single-event upsets in a 22 nm SOI SRAM

Simulation and Experiment in Neutron Induced Single Event Effects in SRAM

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

Quantification of Neutron-Induced Single-Event Upsets in a Static Random-Access Memory by Clinical High-Energy Photon Beam

SEU Effects Induced by Reactor Spallation and Accelerator Neutron Sources in Nano-SRAMs

Methods for Proton Direct Ionization SEU Characterization and Orbital Error-Rate Estimation

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

Investigation of the Impact of Angles and Rotation of Low Energy Protons in SRAM Cells Down to 16nm

SEU ground and flight data in static random access memories

Heavy Ion Induced SEU Sensitivity Evaluation of 3D Integrated SRAMs

Monte Carlo Simulation for Predicting Neutron-Induced Single-Event Upset in Ferroelectric Random Access Memory

Nuclear elastic scattering of protons below 250 MeV in FLUKA v4-4.0 and its role in single-event-upset production in electronics

Impact of Tier Pitch Scaling on Heavy-ion Sensitivity of 3D NAND Flash Memories

Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs

Identification of Pulsed-Neutron-Induced Upset Bursts in Static Random Access Memories using Monte-Carlo Simulations

Neutron-induced effects on a self-refresh DRAM