Abstract:Chalcogenide semiconducting nanomaterials are very attractive in the field of photodetection as well as photovoltaic effect due to their outstanding optoelectronic performances. In this work, Cu 2 ZnSnS 4 nanocrystals (CZTS NC) and Cu 2 ZnSnSe 4 nanocrystals (CZTSe NC) have been synthesized using simple, straightforward, and cost-effective solvothermal method. The structural, microstructural, and optical characterizations are done on the as-synthesized nanocrystals. XRD patterns reveal tetragonal kesterite phase for both CZTS and CZTSe NCs. TEM images indicate nano-range particle distribution, whilst HRTEM images and SAED pattern exhibit good crystallinity for both materials. High-Angle Annular Dark Field (HAADF) images provide elemental mapping regarding constituent elements and hence, purity of the materials are verified. The p-type CZTS NC and CZTSe NC semiconducting inks have been spin coated directly on to the n-type silicon with (100) orientation for fabricating heterojunction devices. The devices are characterized by the current–voltage behaviour under dark as well as irradiation of light. The photodetection characteristics in wavelength range 300–1100 nm are compared for the devices based on CZTS NC and CZTSe NC with same material, i.e. n-Si. CZTS NC-based device shows better responsivity, detectivity, as well as switching speed than CZTSe NC-based device at −1-V bias condition. On the other hand, CZTSe NC-based device shows all these photodetection characteristics to be better than CZTS NC-based device under zero bias condition (self-powered mode). The comparison is explained on the basis of the change of photocurrent with respect to dark under illumination at reverse bias and zero bias conditions for these devices. Due to simplicity and low processing cost, the fabricated devices could be used in large area applications and hence would be suitable in high-speed light sensing devices. The novelty of this work is related to the growth of CZTS NC without sulphurization, whilst CZTSe NC without selenization. The novelty also include the comparison of the photodetection performances of the CZTS NC and CZTSe NC-based devices.

Determinants Affecting the Performance of CZTSSe: Antisite Defects and Multiple Quantum Confinement for Photon-Sensitive Devices

Unveiling the Effect of CZTSSe Quantum Superlattice on the Interfacial and Optical Properties of CZTS Kesterite Solar Cell

Defect-assisted Nonradiative Recombination in Cu2ZnSnSe4 : A Comparative Study with Cu2ZnSnS

Defects in Kesterite Materials towards High-efficiency Solar Cells: Origin, Impact, Characterization, and Engineering

Tailoring the Defects and Carrier Density for Beyond 10% Efficient CZTSe Thin Film Solar Cells

Defect-assisted nonradiative recombination in Cu 2 ZnSn Se 4 : A comparative study with Cu 2 ZnSn S 4

Defect Suppression for High-Efficiency Kesterite CZTSSe Solar Cells: Advances and Prospects

Intrinsic Point Defects and Complexes in the Quaternary Kesterite Semiconductorcu2znsns4

Investigation into complex defect properties of near-stoichiometric Cu2ZnSnSe4 thin film

Study on formation and characterization of kesterite CZTSSe thin films deposited by thermal evaporation technique for solar cell applications

Crystal Structure and Defect Reactions in the Kesterite Solar Cell Absorber Cu[sub 2]znsns[sub 4] (CZTS): Theoretical Insights

Achieving 11.23 % Efficiency in CZTSSe Solar Cells Via Defect Control and Interface Contact Optimization

Transformation of Carrier Recombination Mechanism As Increasing the Germanium Content in Cu2ZnGexSn1-xS4 Single Crystal Prepared by Molten Salt Method

Visualization of Anion Vacancy Defect Annihilation in CZTSe Solar Cells by Hydrogen-Assisted Selenization with In Operando X-ray Nanoprobe Studies

Mapping the Energetics of Defect States in Cu2ZnSnS4 films and the Impact of Sb Doping

Rational Defect Passivation of Cu2ZnSn(S,Se)4 Photovoltaics with Solution-Processed Cu2ZnSnS4:Na Nanocrystals.

Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%

Complicated and Unconventional Defect Properties of the Quasi-One-Dimensional Photovoltaic Semiconductor Sb2Se3.

Fabrication and characterization of photodetector using solvothermally synthesized p-CZTS/Se nanocrystals and n-Si heterojunction

Passivating SnZn Defect and Optimizing Energy Level Alignment via Organic Silicon Salt Incorporation toward Efficient Solution‐Processed CZTSSe Solar Cells

Unveiling the Role of Ge in CZTSSe Solar Cells by Advanced Micro‐To‐Atom Scale Characterizations