Fabrication and characterization of photodetector using solvothermally synthesized p-CZTS/Se nanocrystals and n-Si heterojunction

Rudra Narayan Mondal,Satyajit Saha

DOI: https://doi.org/10.1007/s10854-024-13855-z

2024-11-23

Journal of Materials Science Materials in Electronics

Abstract:Chalcogenide semiconducting nanomaterials are very attractive in the field of photodetection as well as photovoltaic effect due to their outstanding optoelectronic performances. In this work, Cu 2 ZnSnS 4 nanocrystals (CZTS NC) and Cu 2 ZnSnSe 4 nanocrystals (CZTSe NC) have been synthesized using simple, straightforward, and cost-effective solvothermal method. The structural, microstructural, and optical characterizations are done on the as-synthesized nanocrystals. XRD patterns reveal tetragonal kesterite phase for both CZTS and CZTSe NCs. TEM images indicate nano-range particle distribution, whilst HRTEM images and SAED pattern exhibit good crystallinity for both materials. High-Angle Annular Dark Field (HAADF) images provide elemental mapping regarding constituent elements and hence, purity of the materials are verified. The p-type CZTS NC and CZTSe NC semiconducting inks have been spin coated directly on to the n-type silicon with (100) orientation for fabricating heterojunction devices. The devices are characterized by the current–voltage behaviour under dark as well as irradiation of light. The photodetection characteristics in wavelength range 300–1100 nm are compared for the devices based on CZTS NC and CZTSe NC with same material, i.e. n-Si. CZTS NC-based device shows better responsivity, detectivity, as well as switching speed than CZTSe NC-based device at −1-V bias condition. On the other hand, CZTSe NC-based device shows all these photodetection characteristics to be better than CZTS NC-based device under zero bias condition (self-powered mode). The comparison is explained on the basis of the change of photocurrent with respect to dark under illumination at reverse bias and zero bias conditions for these devices. Due to simplicity and low processing cost, the fabricated devices could be used in large area applications and hence would be suitable in high-speed light sensing devices. The novelty of this work is related to the growth of CZTS NC without sulphurization, whilst CZTSe NC without selenization. The novelty also include the comparison of the photodetection performances of the CZTS NC and CZTSe NC-based devices.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied