Abstract:Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline cubic SiC (3C-SiC) layers in silicon. In this study, a silicon carbide layer was synthesized by 40-keV C12+ implantation of a p-type (100) Si wafer at a fluence of 6.5×1017 ions∕cm2 at an elevated temperature. The existence of the implanted carbon in Si substrate was investigated by time-of-flight energy elastic recoil detection analysis. The SiC layer was subsequently irradiated by 10–30 MeV I127 ions to a very low fluence of 1012 ions∕cm2 at temperatures from 80 to 800 °C to study the effect on the crystallization of the SiC layer. Infrared spectroscopy and Raman scattering measurement were used to monitor the formation of SiC and detailed information about the SiC film properties was obtained by analyzing the peak shape of the Si-C stretching mode absorption. The change in crystallinity of the synthesized layer was probed by glancing incidence x-ray diffraction measurement and transmission electron microscopy was also used to confirm the results and to model the crystallization process. The results from all these measurements showed in a coherent way that the synthesized structure was a polycrystalline layer with nanometer sized SiC crystals buried in a-Si matrix. The crystallinity of the SiC layer was enhanced by the low-fluence swift heavy ion bombardment and also favored by higher energy, higher fluence, and higher substrate temperature. It is suggested that electronic stopping plays a dominant role in the enhancement.

Crystallization and silicon carbide formation in two-layer amorphous silicon-carbon films during electron irradiation

Structural and Luminescent Properties of Electron-Irradiated Silicon

Ion Irradiation Induced Nucleation and Growth of Nanoparticles in Amorphous Silicon Carbide at Elevated Temperatures

Crystallisation mechanism of amorphous silicon carbide

Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Temperature Dependence of Irradiation-Induced Nanocrystallization in Amorphous Silicon Carbide

Influence of C_2H_4 on the Properties of Amorphous Silicon Film Grown by Chemical Vapor Deposition

Transformation Of Sio2 To Amorphous Silicon Caused By High-Energy Electrons

Application of 532 nm solid nanosecond laser in crystallization of amorphous silicon thin films

Crystalline-to-amorphous Transition in Silicon Carbide under Neutron Irradiation

Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

In situ crystallization of amorphous Sb2Se3 films at electron beam irradiation

Irradiation Effects on Amosic-3 Silicon Carbide Composites by Si Ions Implantation

Relaxation and crystallization of amorphous silicon carbide probed by optical measurements

The formation of well-defined crystalline structures by UV laser irradiation of amorphous silicon films

Structure and Photoluminescence Properties of Sicn Films Grown by Dual Ion Beam Reactive Sputtering Deposition

Effect of Electron Beam Irradiation on Structure and Properties of SiCN Thin Films Prepared by Plasma Assisted Radio Frequency Magnetron Sputtering

Ion Beam Induced Crystallization Effect and Growth Kinetics of Buried SiC Layers Formed by Carbon Implantation into Silicon

Raman Spectroscopy Analysis of Excimer Laser Crystallized Amorphous Silicon Films

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films