Abstract:A patterning process with assistant of PI paste is developed and through it the quasi 2D perovskite films can be patterned into an arbitrary shape without damage. This convenient process can reach an accuracy of at least 20 micrometers and is applied to realize a kind of quasi‐2D PSK/IGZO phototransistor array to demonstrate the potential imaging application. Monolithic integration of perovskite materials and their optoelectronic devices with well‐developed thin‐film transistor (TFT) backplane is leading to new applications in displays and image sensors. Herein, a scalable polyimide assisted patterning approach for monolithic integration of perovskite based high‐sensitive phototransistor array on indium gallium zinc oxide (IGZO) active matrix backplane is introduced. Polyimide vias are first formed by conventional photolithography process, through which uniform perovskite films of arbitrary patterns with feature size less than 20 μm are fabricated by spin‐on‐patterning method. Using this technique, patterns of quasi 2D perovskite photoabsorbing layer are precisely deposited onto the channel area of the photosensing IGZO TFT, forming high‐performance phototransistors with responsivity and detectivity reaching 835.7 A W−1 and 5.4 × 1012 Jones, respectively. An image sensor with 8 × 8 pixels array containing both photosensing perovskite/IGZO transistors and switching IGZO transistors is demonstrated, in which the switching IGZO transistor elements on the backplane are protected by the non‐patterned region of the polyimide encapsulation layer. This whole fabrication process is compatible with TFT manufacturing process and will significantly reduce the cost needed for constructing next generation high‐resolution image sensors.

Organic photoconductive film–stacked active pixel sensor pixel circuits using indium–tin–zinc-oxide thin-film transistors

Color-Filter-Free Three-Layer-Stacked Image Sensor Using Blue/Green-Selective Organic Photoconductive Films with Thin-Film Transistor Circuits on CMOS Image Sensors

Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection

Monolithic Integration of Perovskite Photoabsorbers with IGZO Thin‐Film Transistor Backplane for Phototransistor‐Based Image Sensor

A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity

Flexible, active-matrix flat-panel image sensor for low dose X-ray detection enabled by integration of perovskite photodiode and oxide thin film transistor

A Highly Responsive Organic Image Sensor Based on a Two‐Terminal Organic Photodetector with Photomultiplication

A Monolithically Integrated 640 × 512 CMOS-Perovskite Image Sensor

Three-Dimensional Integration of Switching and Light-Sensitive Organic Transistors in Solution Processes for Flexible High-Resolution Active-Matrix Optical Imager

Amorphous In–Ga–Zn–O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays

An Active Pixel Sensor Array Based on Compact Photoelectron In-situ Sensing Device (PISD)

Active pixel sensor matrix based on monolayer MoS2 phototransistor array

Monolithic Integration of Semi-Transparent and Flexible Integrated Image Sensor Array with a-IGZO Thin-Film Transistors (TFTs) and p-i-n Hydrogenated Amorphous Silicon Photodiodes

Dual-gate photo thin-film transistor: a “smart” pixel for high- resolution and low-dose X-ray imaging

Monolithically printed all-organic flexible photosensor active matrix

12.2: High Performance AMOLED Pixel Circuit Using Interleaved Emit Signals Based on Low‐Temperature Poly‐Si and Oxide (LTPO) TFTs

Solution-processable organic photodiodes with high detectivity and thermal stability designed for visible or near-infrared CMOS image sensors

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels*

Spin‐On‐Patterning of Sn–Pb Perovskite Photodiodes on IGZO Transistor Arrays for Fast Active‐Matrix Near‐Infrared Imaging

High-responsivity, High-detectivity Photomultiplication Organic Photodetector Realized by a Metal-Insulator-Semiconductor Tunneling Junction

A Single-Transistor Active Pixel Cmos Image Sensor Architecture