Solution-processable organic photodiodes with high detectivity and thermal stability designed for visible or near-infrared CMOS image sensors

Hidneori Nakayama,Kazuhiro Nakabayashi,Rieko Hata,Kazuhiro Mouri,Shigeru Nakane,Izuru Takei

DOI: https://doi.org/10.1117/12.2593410

2021-08-04

Abstract:We report materials and device designs of solution-processable organic photodiodes (OPDs) for visible or near-infrared (NIR) light detection compatible with CMOS image sensors (CIS), a large market for photodiodes. OPDs for CIS need to be reliably processable on silicon wafers with conventional methods such as spin coating, to have extremely low dark current even at a couple of negative voltages to utilize high gain read-out circuits, and to be stable under 150–250C heating to endure module packaging. Those requirements have not been taken into an account for organic photovoltaics (OPVs) development, which assumed large area printing at low processing temperature (<150°C). We selected a conventional structure (p-i-n) with a polymeric hole transport layer (HTL) which we originally made for organic light-emitting diodes (OLEDs). The HTL is free from acids and dopants, contributing to excellent device stability. For visible OPDs, we applied a donor/acceptor blend originally made for OPVs, and obtained an external quantum yield (EQE) of ~85% at 450–700 nm with a dark current of ~10−7 mA/cm2. For NIR OPDs targeting 940 nm, we newly developed NIR absorbing non-fullerene acceptors (NFAs) having a sharp absorption peak at the wavelength to realize high EQE (~80%) and low thermal carriers at dark (~10−5 mA/cm2). Both type of OPDs retained 70–100% of their original EQEs after thermal annealing at <150C for two hours. In the presentation video, we will show NIR images obtained from the imaging arrays.