Abstract:Owing to its high luminous efficiency, chemical stabili ty and long lifetime, GaN based InGaN/GaN multiquantum wells (MQWs) LEDs is widely used in solidstate lighting and backlight of liquid crystal display. Recentl y, due to the rising demand of wearable and portable techno logy, the LEDs device size is required to be smaller. Compa red with traditional LEDs, the size of a single pixel of micr oLEDs can be decreased to tens of microns and each pixel ca n be controlled or driven independently, which have achiev ed much advantages in high resolution display and visiblelight communication (VLC). As to further improve the resol ution, the next trend is to shrink the size of LED pixe ls into several hundred nanometers, which is called na no-LEDs, or NLED for the next generation display. Here, we have investigated the fabrication of InGa N/GaN MQW nano-sized LEDs through bottom-up and top-down methods. Firstly, a series of highly ordered c-plane InGaN/GaN nanorod (NR) arrays were fabricate d by our developed soft UV-curing nanoimprint lithogr aphy on a wafer, as shown in Figure 1. Then, InGaN/ GaN nanorod LEDs were fabricated by an inductively coupled plasma(ICP) process. The radiative recombinati on in NLED samples is found to be greatly enhanced due to not only the suppressed non-radiative recombina tion but also the strain relaxation and optical waveguid e effects. Blue and green NLEDs have been finally rea lized, with good current–voltage performance and unifo rm luminescence. Secondly, InGaN/GaN multiple quant um well (MQW) nanowire ensembles grown on Si (11 1) substrates by plasma-assisted molecular beam epitax y (PA-MBE) are investigated. Well-oriented InGaN/GaN nanowires with perfect wurtzite crystal structure can b e achieved by optimizing the growth parameter of bott om GaN nanowires. As to realize electrical injected emission, InGaN/G aN single nanorod light-emitting diodes (NLEDs) have successfully been fabricated by nanoimprint lithography and focused ion beam-induced deposition. The current –voltage characteristics of single NLEDs show low lea kage current of 2 × 10 A at a reverse bias of −5 V and turn-ON voltage of ∼3.8 V. Linear polarization-or iented parallel to the c-axis with a degree of ∼50% w as discovered from the electroluminescence emission of single NLEDs[Figure 2]. Fig. 1. Schematic of our nanoimprint fabrication technology and SEM images of Nano-LEDs.

P‐8.6: Elimination of Nanorods by Tetramethylammonium Hydroxide for the Fabrication of AlGaN‐based UV‐C Micro‐LED Array

Enhancing the optical and electrical properties of AlGaN ultraviolet-C micro-LED via a hybrid scheme of plasma and chemical treatment

Optical Device Based on a Nanopillar Array by the Pattern Transfer of an Anodic Aluminum Oxide Membrane

3.2: Elevating the Light Output Power Density of Scaling‐down AlGaN Ultraviolet‐C Micro‐LED

Efficiency boosting of 236 nm AlGaN-based micro-LEDs

High-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography

275 nm Deep Ultraviolet AlGaN-Based Micro-LED Arrays for Ultraviolet Communication

AlGaN Ultraviolet Micro-LEDs

Fabrication of AlGaN Nanorods with Different Al Compositions for Emission Enhancement in UV Range

Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

AlGaN-Based Deep-UV Micro-LED Array for Quantum Dots Converted Display With Ultra-Wide Color Gamut

Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC

Etching-free pixel definition in InGaN green micro-LEDs

The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes

Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded

Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam

46.4: Fabrication of InGaN/GaN‐based Nano‐leds for Display Applications

Enhanced Electro-Optic Performance of Surface-Treated Nanowires: Origin and Mechanism of Nanoscale Current Injection for Reliable Ultraviolet Light-Emitting Diodes

UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection

Optical Properties of Nanopillar AlGaN/GaN MQWs for Ultraviolet Light-Emitting Diodes.

Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width