Abstract:Amorphous oxide semiconductors, especially indium gallium zinc oxide (IGZO), have been widely studied and obtained significant progress in flexible thin-film transistors (TFTs) due to the high carrier mobility and low deposition temperature. However, a further annealing step is generally required to activate electrical properties and improve the device performance, which limited their applications in flexible electronics. In this study, we achieved flexible TFTs and arrays using co-sputtered IGZO and indium tin oxide (ITO) as channels deposited at room temperature without post-annealing. It was found that better transistor switching properties could be effectively achieved by regulating the sputtering power of ITO in the co-sputtered deposition. The device performance is comparable to that of the conventional oxide TFTs with high annealing temperatures (≥300 °C), exhibiting a high saturation mobility (μsat) of 15.3 cm 2 V -1 s -1 , a small subthreshold swing (SS) of 0.21 V dec -1 , and a very high on-off ratio (Ion/off) of 10 11 . In addition, a 12 × 12 flexible TFT array was achieved with uniform performance owing to the low-temperature processing advantage of this technique. The flexible TFTs exhibited robust mechanical flexibility with a minimum bending radius of 5 mm and bending cycles up to 1000. Furthermore, an inverter based on co-sputtered IGZO and ITO was demonstrated with the maximum gain of 22. All these achievements based on the proposed TFTs without post-annealing process are expected to promote the applications in advanced flexible displays and large-area integrated circuits.

Flexible OLED fabrication with ITO thin film on polymer substrate

ITO/Ag/ITO Multilayer Polymer Films by Roll-to-Roll Process and Performance of Flexible OLED Devices

Gas Phase Fabrication of Morphology-Controlled ITO Nanoparticles and Their Assembled Conductive Films.

High-performance ITO thin films for on-cell touch sensor of foldable OLED displays

Properties of PET/ITO Thin Films Deposited by DC Magnetron Sputtering

Fabrication of Low-temperature ITO Thin Film and Its Application in TOLEDs

Multicoated Flexible Indium Tin Oxide Electrodes Fabricated Using Magnetron Sputtering and Arc Plasma Ion Plating for Flexible Perovskite Solar Cells

Flexible two-dimensional indium tin oxide fabricated using a liquid metal printing technique

Study on ITO/Ag/ITO multilayer film as the electrode of organic light-emitting diodes

A Novel Strategy of Fabricated Flexible ITO Electrode by Liquid Metal Ultra-Thin Oxide Film

Flexible indium zinc oxide/Ag/indium zinc oxide multilayer electrode grown on polyethersulfone substrate by cost-efficient roll-to-roll sputtering for flexible organic photovoltaics

A high quality ITO/PET electrode for flexible and transparent optoelectronic devices

ITO-free OLEDs utilizing inkjet-printed and low temperature plasma-sintered Ag electrodes

Large-Scale, High-Transparency, Ultra-thin ITO Membranes with Robust Conductivity and Flexibility

Roll-to-Roll sputtered ITO/Cu/ITO multilayer electrode for flexible, transparent thin film heaters and electrochromic applications

Room-temperature fabrication of flexible oxide TFTs by co-sputtering of IGZO and ITO

Evaluation of Transparent ITO/Nano-Ag/ITO Electrode Grown on Flexible Electrochromic Devices by Roll-to-Roll Sputtering Technology

Naphthalene Diimide-Modified SnO2 Enabling Low-Temperature Processing for Efficient ITO-Free Flexible Perovskite Solar Cells

Low-Temperature and Solution-Processed Indium Tin Oxide Films and Their Applications in Flexible Transparent Capacitive Pressure Sensors

Flexible Substrates with Polyimide Buffer Layers for Organic Light-Emitting Diodes

Room temperature processed high mobility W-doped In2O3 electrodes coated via in-line arc plasma ion plating for flexible OLEDs and quantum dots LEDs