High performance perovskite luminescent devices on Si substrates by controlling quasi-two-dimensional phases

Xiaoxiao Xu,Fangying Juan,Ting Zhu,Ke Xiao,Teng Sun,Ling Xu,Jun Xu,Kunji Chen,Chen Jiaming
DOI: https://doi.org/10.1088/1361-6641/acc350
IF: 2.048
2023-03-12
Semiconductor Science and Technology
Abstract:High-performance air-processed perovskite light-emitting devices combined with Si materials are currently an opportunity because of the potential applications in multiple function integration. Here, a high-efficient Si/perovskite heterojunction near infrared light-emitting device have been fabricated by controlling the quasi-2-dimensional (quasi-2D) phases via introduction of 4-fluorobenzylamine hydroiodide (FPMAI) while the whole device fabrication process is simple and under ambient air. It was found that the luminescence behavior could be modulated by changing the quasi-2D phase ratio. The external quantum efficiency (EQE) reached 9.7% at the optimized parameters, which was 75% higher than that of the device with a pure 3-dimensional phase. Our results indicate an appropriate and easy method to improve the performance of air-processed Si-based perovskite light-emitting devices.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
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