Abstract:A CMOS compatible P+/N-well/P-sub double junction photodiode pixel was proposed, which can efficiently detect fluorescence from CsI(Tl) scintillation in an X-ray sensor. Photoelectric and spectral responses of P+/N-well, N-well/P-sub and P+/N-well/P-sub photodiodes were analyzed and modeled. Simulation results show P+/N-well/P-sub photodiode has larger photocurrent than PC/Nwell photodiode and N-well/P-sub photodiode, and its spectral response is more in accordance with CsI(Tl) fluorescence spectrum. Improved P+/N-well/P-sub photodiode detecting CsI(Tl) fluorescence was designed in CSMC 0.5 mu m CMOS process, CTIA (capacitive transimpedance amplifier) architecture was used to readout photocurrent signal. CMOS X-ray sensor IC prototype contains 8 x 8 pixel array and pixel pitch is 100 x 100 mu m(2). Testing results show the dark current of the improved P+/N-well/P-sub photodiode (6.5 pA) is less than that of PC/Nwell and P+/N-well/P-sub photodiodes (13 pA and 11 pA respectively). The sensitivity of P+/N-well/P-sub photodiode is about 20 pA/lux under white LED. The spectrum response of P+/N-well/P-sub photodiode ranges from 400 nm to 800 nm with a peak at 532 nm, which is in accordance with the fluorescence spectrum of CsI(Tl) in an indirect X-ray sensor. Preliminary testing results show the sensitivity of X-ray sensor IC under Cu target X-ray is about 0.21 V.m(2)/W or 5097e(-)/pixel @ 8.05 keV considering the pixel size, integration time and average energy of X-ray photons.

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