Abstract:NiO/Ga$_{2}$O$_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we report on the time evolution of the static electrical properties in the widely studied p-NiO/n-Ga$_{2}$O$_{3}$heterojunction diodes and the formation of NiGa$_{2}$O$_{4}$ interfacial layers when operated at $550^{\circ}$C. Results of our thermal cycling experiment show an initial leakage current increase which stabilizes after sustained thermal load, due to reactions at the NiO-Ga$_{2}$O$_{3}$ interface. High-resolution TEM microstructure analysis of the devices after thermal cycling indicates that the NiO-Ga$_{2}$O$_{3}$ interface forms ternary compounds at high temperatures, and thermodynamic calculations suggest the formation of the spinel NiGa$_{2}$O$_{4}$ layer between NiO and Ga$_{2}$O$_{3}$. First-principles defect calculations find that NiGa$_{2}$O$_{4}$ shows low p-type intrinsic doping, and hence can also serve to limit electric field crowding at the interface. Vertical NiO/Ga$_{2}$O$_{3}$ diodes with intentionally grown 5 nm thin spinel-type NiGa$_{2}$O$_{4}$ interfacial layers show excellent device ON/OFF ratio of > 10$^{10}$($\pm$3 V), V$_{ON}$ of ~1.9 V, and breakdown voltage of ~ 1.2 kV for an initial unoptimized 300-micron diameter device. These p-n heterojunction diodes are promising for high-voltage, high-temperature applications.

Large critical field of Li-doped NiO investigated by p+-NiO/n+-Ga2O3 heterojunction diodes

Oxygen Stoichiometry Engineering in P‐Type NiOx for High‐Performance NiO/Ga2O3 Heterostructure p‐n Diode

NiGa2O4 interfacial layers in NiO/Ga2O3 heterojunction diodes at high temperature

NiGa$_{2}$O$_{4}$ interfacial layers in NiO/Ga$_{2}$O$_{3}$ heterojunction diodes at high temperature

NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

A 1.86-Kv Double-Layered NiO/ Β -Ga2o3 Vertical P–n Heterojunction Diode

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices

2.41 Kv Vertical P-Nio/n-ga2o3 Heterojunction Diodes with a Record Baligas Figure-of-Merit of 5.18 GW/cm2

Performance Enhancement of NiOx/β-Ga2O3 Heterojunction Diodes by Synergistic Interface Engineering

Performance Enhancement of NiO $_{\textit{x}}$ / $\beta$ -Ga $_{\text{2}}$ O $_{\text{3}}$ Heterojunction Diodes by Synergistic Interface Engineering

Recent advances in NiO/Ga2O3 heterojunctions for power electronics

Over 1.8 GW/cm(2) beveled-mesa NiO/beta-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability

Field-Plated NiO/Ga2O3 P-N Heterojunction Power Diodes with High-Temperature Thermal Stability and Near Unity Ideality Factors

2.6 Kv NiO/Ga2O3 Heterojunction Diode with Superior High-Temperature Voltage Blocking Capability

Demonstration of the P-Niox/n-ga2o3 Heterojunction Gate FETs and Diodes with BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2

Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination

Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes

Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II P-N Heterojunctions

Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga<sub>2</sub>O<sub>3</sub> Diode

2Kv Low Leakage Vertical NiO/β-Ga2O3 Hetero-Junction Diode and Its Thermal/Electrical Stability

Band Alignment and Interface Recombination in NiO/ β -Ga 2 O 3 Type-II p-n Heterojunctions