Abstract:Silicon Carbide (SiC) is one of the most promising new-generation semiconductor material for high-power and high-efficiency electronic devices overcoming in some respects silicon mature performances. SiC substrates are more and more widely used in many semiconductor-based applications, like DC/AC converters. SiC-based MOSFET technology is nowadays applied in electric/hybrid vehicle power conversion systems. To further enhance the performance of SiC HV devices, trench-gate MOSFET design is preferred to planar-gate MOSFET structure. The trenches frame is defined by Reactive Ion Etching (RIE) by which high aspect ratio structures can be attained. Despite the fine-tuning of the etching process, some sidewall striations' undesired effects occur, degrading the performances of the devices. Accordingly, H 2 gas etching and sacrificial oxidation methods were adopted to recover the wall integrity, trying to restore the atomic roughness that characterizes the 4H–SiC. Since this problem interests vertically oriented trench sidewalls, a quantitative estimation of the roughness is difficult as Atomic Force Microscopy (AFM) measurements are always time-dispending and hard to manage: therefore, only a qualitative evaluation of the sidewall roughness can be accomplished by FIB/SEM micrographs. ImageJ software is herein used for a quantitative analysis starting from SEM images allowing a fast and repeatable quality assessment of trench striations before and after the recovery processes. The image analysis can produce numerical data regarding the status of the SiC trenches. In the present work, we will refer to the image analysis output value as Relative Roughness (RR). It represents the numerical data helpful to fulfill the study with a Design of Experiments (DOE) and Responsive Surface Method (RSM) aimed to optimize the post-etch recovery procedures.

Enhanced erosion resistance in semiconductor reactive ion etcher focus ring with large grain PVT SiC

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Methods to Protect Silicon Microstructures from the Damages in Deep Reactive Ion Etching

Remote Plasma Enhanced Cyclic Etching of a Cyclosiloxane Polymer Thin Film

Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers

Mechanisms for plasma etching of RRAM SiO2 with diblock copolymer selectivity

Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size

Wafer level bulk titanium ICP etching using SU8 as an etching mask

Investigation and Modeling of Etching Through Silicon Carbide Vias (TSiCV) for SiC Interposer and Deep SiC Etching for Harsh Environment MEMS by DoE

Investigation on femtosecond laser combined with dynamic wet etching machining of SiC/SiC

Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device

Application of PECVD SiC in glass micromachining

High Aspect Ratio Etching of Nanopores in PECVD SiC Through AAO Mask

Micro-trench free 4H-SiC etching with improved SiC/SiO2 selectivity using inductively coupled SF6/O2/Ar plasma

Trench Profile Control of Silicon DRIE Process on ICP Tools

Etching Characteristics of PECVD SiC

Improvement of oxide removal rate in chemical mechanical polishing by forming oxygen vacancy in ceria abrasives via ultraviolet irradiation

Image analysis development for optimization of 4H–SiC trench recovery treatment by combination of gas etching and sacrificial oxidation approaches

Optimization of Etching Processes for the Fabrication of Smooth Silicon Carbide Membranes for Applications in Quantum Technology