Abstract:Tin selenide (SnSe) and tin sulfide (SnS) have recently attracted particular interest due to their great potential for large-scale thermoelectric applications. A complete prediction of the thermoelectric performance and the understanding of underlying heat and charge transport details are the key to further improvement of their thermoelectric efficiency. We conduct comprehensive investigations of both thermal and electrical transport properties of SnSe and SnS using first-principles calculations combined with the Boltzmann transport theory. Due to the distinct layered lattice structure, SnSe and SnS exhibit similarly anisotropic thermal and electrical behaviors. The cross-plane lattice thermal conductivity κL is 40–60% lower than the in-plane values. Extremely low κL is found for both materials because of high anharmonicity, while the average κL of SnS is ∼8% higher than that of SnSe from 300 to 750 K. It is suggested that nanostructuring would be difficult to further decrease κL because of the short mean free paths of dominant phonon modes (1–30 nm at 300 K), while alloying would be efficient in reducing κL considering that the relative κL contribution (∼65%) of optical phonons is remarkably large. On the electrical side, the anisotropic electrical conductivities are mainly due to the different effective masses of holes and electrons along the a, b, and c axes. This leads to the highest optimal ZT values along the b axis and lowest ones along the a axis in both p-type materials. However, the n-type ones exhibit the highest ZTs along the a axis due to the enhancement of power factor when the chemical potential gradually approaches the secondary conduction band valley that causes significant increase in electron mobility and density of states. Owing to the larger mobility and smaller κL along the given direction, SnSe exhibits larger optimal ZTs compared with SnS in both p- and n-type materials. For both materials, the peak ZTs of n-type materials are much higher than those of p-type ones along the same direction. The predicted highest ZT values at 750 K are 1.0 in SnSe and 0.6 in SnS along the b axis for the p-type doping, while those for the n-type doping reach 2.7 in SnSe and 1.5 in SnS along the a axis, rendering them among the best bulk thermoelectric materials for large-scale applications. Our calculations show reasonable agreements with the experimental results and quantitatively predict the great potential in further enhancing the thermoelectric performance of SnSe and SnS, especially for the n-type materials.

Investigating charge carrier scattering processes in anisotropic semiconductors through first-principles calculations: the case of p-type SnSe

First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS

Semiclassical electron and phonon transport from first principles: application to layered thermoelectrics

Resolving Different Scattering Effects on the Thermal and Electrical Transport in Doped SnSe

Transport Properties and High Thermopower of SnSe2: A Full Ab-Initio Investigation

Efficient calculation of carrier scattering rates from first principles

Charge Transport in Thermoelectric SnSe Single Crystals

Investigation and field effect tuning of thermoelectric properties of SnSe2 flakes

Four-Phonon Scattering Effect and Two-Channel Thermal Transport in Two-Dimensional Paraelectric SnSe

Thermoelectric transport in monolayer SnSe from first-principles calculations

The comprehensive first-principle study of the thermoelectric performance of p- and n-type SnS

Understanding the electrical transports of p -type polycrystalline SnSe with effective medium theory

Microscopic origin of the excellent thermoelectric performance in n-doped SnSe

The Normal/Umklapp/Intervally/Intravally Transport Property of 2D SnSe

Photoinduced anisotropic lattice dynamic response and domain formation in thermoelectric SnSe

First-Principles Calculations of Thermoelectric Properties of IV–VI Chalcogenides 2D Materials

Unraveling the dominant phonon scattering mechanism in thermoelectric compound ZrNiSn

Strong anharmonicity and high thermoelectric efficiency in high temperature SnS from first-principles

$\textit{Ab initio}$ study of electron mean free paths and thermoelectric properties of lead telluride

3D charge and 2D phonon transports leading to high out-of-plane <i>ZT</i> in n-type SnSe crystals

Amorphous-like thermal conductivity and high thermoelectric figure of merit in “π” SnS and SnSe