Engineering atomic-level crystal lattice and electronic band structure for extraordinarily high average thermoelectric figure of merit in n-type PbSe
Bangzhi Ge,Hyungseok Lee,Jino Im,Youngsu Choi,Shin-Yeong Kim,Ji Yeong Lee,Sung-Pyo Cho,Yung-Eun Sung,Kwang-Yong Choi,Chongjian Zhou,Zhongqi Shi,In Chung
DOI: https://doi.org/10.1039/d3ee01226c
2023-08-03
Energy and Environmental Sciences
Abstract:We stabilize multiscale defect structures involving interstitial Cu, displaced Pb and Se atoms from the regular lattice points, dislocations driven by scarce anion vacancies, and nanoscale mosaics driven thermodynamically by the new composition Cu x Pb(Se 0.8 Te 0.2 ) 0.95 ( x = 0−0.0057). Directly observing their atomic-resolution structures, employing spherical aberration-corrected scanning transmission electron microscope and atom probe tomography, uncovers formation mechanisms, helping understand how they affect bulk transport properties. They independently manipulate the physical quantities determining thermoelectric figure of merit, ZT. Carrier concentration dynamically boosts electrical conductivity with rising temperature while negligibly damaging carrier mobility. Significantly increased effective mass of electron in the conduction band above theoretical prediction gives a high magnitude of Seebeck coefficients. Consequently, the best composition achieves remarkably high average power factor ~24 μW cm −1 K −2 from 300 to 823 K, with substantially depressed lattice thermal conductivity ~0.2 W m −1 K −1 at 723 K. With a ZT ~0.55 at 300 K, an average ZT is ~1.30 from 400 to 823 K, highest for all n-type polycrystalline thermoelectric systems including PbTe-based materials. The achievement in this work greatly escalates the predictability in designing defect structures for high thermoelectric performance, and demonstrates PbSe can eventually outperform PbTe in thermoelectrics.
energy & fuels,chemistry, multidisciplinary,engineering, chemical,environmental sciences