Abstract:In the wide group of thermoelectric compounds, the half-Heusler ZrNiSn alloy is one of the most promising materials thanks to its thermal stability and narrow band gap, which open it to the possibility of mid-temperature applications. A large variety of defects and doping can be introduced in the ZrNiSn crystalline structure, thus allowing researchers to tune the electronic band structure and enhance the thermoelectric performance. Within this picture, theoretical studies of the electronic properties of perfect and defective ZrNiSn structures can help with the comprehension of the relation between the topology of defects and the thermoelectric features. In this work, a half-Heusler ZrNiSn alloy is studied using different defective models by means of an accurate Density Functional Theory supercell approach. In particular, we decided to model the most common defects related to Ni, which are certainly present in the experimental samples, i.e., interstitial and antisite Ni and a substitutional defect consisting of the replacement of Sn with Sb atoms using concentrations of 3% and 6%. First of all, a comprehensive characterization of the one-electron properties is performed in order to gain deeper insight into the relationship between structural, topological and electronic properties. Then, the effects of the modeled defects on the band structure are analyzed, with particular attention paid to the region between the valence and the conduction bands, where the defective models introduce in-gap states with respect to the perfect ZrNiSn crystal. Finally, the electronic transport properties of perfect and defective structures are computed using semi-classical approximation in the framework of the Boltzmann transport theory as implemented in the Crystal code. The dependence obtained of the Seebeck coefficient and the power factor on the temperature and the carrier concentration shows reasonable agreement with respect to the experimental counterpart, allowing possible rationalization of the effect of the modeled defects on the thermoelectric performance of the synthesized samples. As a general conclusion, defect-free ZrNiSn crystal appears to be the best candidate for thermoelectric applications when compared to interstitial and antisite Ni defective models, and substitutional defects of Sn with Sb atoms (using concentrations of 3% and 6%) do not appreciably improve electronic transport properties.

Unraveling the dominant phonon scattering mechanism in thermoelectric compound ZrNiSn

Crucial Role of Ni Point Defects and Sb Doping for Tailoring the Thermoelectric Properties of ZrNiSn Half-Heusler Alloy: An Ab Initio Study

Optical phonon modes assisted thermal conductivity in p-type ZrIrSb Half-Heusler alloy: A combined experimental and computational study

Improving the thermoelectric performance of double half-Heusler compounds ZrNi(In,Sb)

High thermoelectric performance in ZrNiSn through electron injection and boosting carrier mobility

Ni Atomic Disorder in ZrNiSn Revealed by Scanning Transmission Electron Microscopy

Anomalous Thermal Conductivity Enhancement in Low Dimensional Resonant Nanostructures Due to Imperfections

Tuning the Thermal Conductivity of Silicon Phononic Crystals Via Defect Motifs: Implications for Thermoelectric Devices and Photovoltaics

Beneficial contribution of alloy disorder to electron and phonon transport in half-heusler thermoelectric materials

The Intrinsic Disorder Related Alloy Scattering in ZrNiSn Half-Heusler Thermoelectric Materials.

Physical properties of thermoelectric zinc antimonide using first-principles calculations

Demonstration of a phonon-glass electron-crystal strategy in (Hf,Zr)NiSn half-Heusler thermoelectric materials by alloying

Vacancies tailoring lattice anharmonicity of Zintl-type thermoelectrics

First-principles study of disordered half-Heusler alloys \textit{X}Fe$_{0.5}$Ni$_{0.5}$Sn (\textit{X} = Nb, Ta) as thermoelectric prospects

Lattice thermal conductivity of Ti$_x$Zr$_y$Hf$_{1-x-y}$NiSn half-Heusler alloys calculated from first principles: Key role of nature of phonon modes

Theoretical investigation of the lattice thermal conductivities of II-IV-V2 pnictide semiconductors

Half-Heusler thermoelectric materials: NMR studies

Thermal Expansion of Ni-Ti-Sn Heusler and Half-Heusler Materials from First Principles Calculations and Experiments

Grain Boundary Scattering of Charge Transport in n‐Type (Hf,Zr)CoSb Half‐Heusler Thermoelectric Materials

Intrinsic Zn Vacancies-Induced Wavelike Tunneling of Phonons and Ultralow Lattice Thermal Conductivity in Zintl Phase Sr 2 ZnSb 2

Establishing the Carrier Scattering Phase Diagram for ZrNiSn-based Half-Heusler Thermoelectric Materials