Abstract:Based on the Boltzmann transport equation, both the electrical and thermal transport properties of 2D SnSe have been accurately calculated. The mobility of n-type SnSe is higher than that of p type due to the greater average velocity and smaller electron-phonon coupling matrix. For both n-type and p-type electron-phonon scattering, the LA phonon mode primarily governs the total, Normal, Umklapp, Intervally, and Intravally scattering processes. As the temperature increases from 300K to 800K, the LA phonon remains the dominant scattering mode. Compared to the Umklapp and Intervally scattering process, both Normal and Intravally scattering processes mainly govern electrical transport. In terms of phonon-electron scattering, the Normal/Intravalley processes dominate initially, followed by the Umklapp/Intervalley processes governing thermal transport as the temperature increases, governing thermal transport. The critical carrier concentration changes from 10(18) cm(-3) to 1019 cm(-3), as the temperature rises from 300K to 800K, indicating a shift in the competitive relationship between Normal/Intravalley and Umklapp/Intervalley processes with temperature. Using the iteration method, the optimal power factor for n type@300K, p type@300K, n type@800K, p type@800K are 1.63 mu W/cmK, 5.62 mu W/cmK, 2.30 mu W/cmK, 4.04 mu W/cmK, respectively. After considering phonon-electron scattering, the lattice thermal conductivity of n type (p type) is 0.70 W/mK (0.64 W/mK) at 300K and 0.31 W/mK (0.30 W/mK) at 800K. The optimal ZT of n type is 1.17 at 800K, originating from the Normal scattering process, while the optimal ZT of p type is 0.86, stemming from the Intravally scattering process. Our results provide a deeper understanding of the transport processes in SnSe and offer insights for tuning the thermoelectric properties of two-dimensional materials through electron-phonon and phonon-electron scattering processes.

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