Effect of SiO 2 Interlayer Thickness in Au/SiO 2 /Si Multilayer Systems on Si Sources and the Formation of Au‐Based Nanostructures

Feitao Li,Manuel Oliva‐Ramírez,Dong Wang,Peter Schaaf

DOI: https://doi.org/10.1002/admi.202101493

IF: 5.4

2021-12-02

Advanced Materials Interfaces

Abstract:Abstract Si sources involved in the growth of Au–SiO x nanostructures are investigated through the rapid thermal annealing of gold thin films on SiO 2 /Si substrates with various SiO 2 layer thicknesses (3, 25, 100, 500 nm) in a reducing atmosphere. This method reveals three Si sources whose involvement depends on the thickness of the SiO 2 layers, i.e., Si diffusion from the substrate, and SiO from SiO 2 decomposition and from Si active oxidation. Increasing thicknesses of the SiO 2 layer hampers the Si diffusion and the decomposition of regions of the SiO 2 layer, which decreases the concentrations of discovered regions weakening the Si active oxidation. These discovered regions appear in systems with a SiO 2 layer of 25 or 100 nm, while they are absent for a 500 nm layer. Furthermore, Au–SiO x nanostructures of different shapes form in each system. Both behaviors indicate that the influence and transport mechanisms of the different Si sources are largely dependent on the thicknesses of the SiO 2 layers and that they control the evolution of the Au–SiO x nanostructures. A clear understanding of the relationship between these thicknesses and the possible Si sources and their roles in the evolution of the nanostructures makes the tailored fabrication of nanostructures possible.

materials science, multidisciplinary,chemistry