Abstract:The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thin films in the presence of oxygen but also in the absence of oxygen for the growth temperature calibration (by determining the adsorption temperature of the elements) and in-situ etching of oxide layers (e. g., Ga2O3 etched by Ga). These elemental fluxes may, however, leave unwanted cation adsorbates or droplets on the surface, which traditionally require removal by in-situ superheating or ex-situ wet-chemical etching with potentially surface-degrading effects. This study demonstrates a universal in-situ approach to remove the residual cation elements from the surface via conversion into a volatile suboxide by a molecular O2-flux in an MBE system followed by suboxide evaporation at temperatures significantly below the elemental evaporation temperature. We experimentally investigate the in-situ etching of Ga and Ge cation layers and their etching efficiency using in-situ line-of-sight quadrupole mass spectrometry (QMS) and reflection high-energy electron diffraction (RHEED). The application of this process is demonstrated by the in-situ removal of residual Ga droplets from a SiO2 mask after structuring a Ga2O3 layer by in-situ Ga-etching. This approach can be generally applied in MBE and MOCVD to remove residual elements with vapor pressure lower than that of their suboxides, such as B, In, La, Si, Sn, Sb, Mo, Nb, Ru, Ta, V, and W.

Termination Control of (001) and (110) NdGaO3 Single-Crystal Substrates by Selective Chemical Etching

SrTiO$_3$ termination control: A method to tailor the oxygen exchange kinetics

Direct visualization and control of SrOx segregation on semiconducting Nb doped SrTiO3 (100) surface

Optimizing surface treatment for Nb-doped SrTiO3 substrates: effects on structural and chemical properties

Interface creation on a mixed-terminated perovskite surface

Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge

Assessment of the (010) $β$-Ga$_2$O$_3$ Surface and Substrate Specification

In situ Etching of \b{eta}-Ga2O3 using tert-Butyl Chloride in an MOCVD System

Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

Direct Measurement of the Crystallographically Sensitive Atomic Termination of Nanophase Cerium Dioxide

Tuning the Termination of the Srtio3(110) Surface by Ar+ Sputtering

Epitaxial Growth of Pbtio3 Thin Film on (110)ndgao3 Substrate by Metalorganic Chemical Vapor Deposition

Heated-H3PO4 etching of (001) β-Ga2O3

Demonstration of MOCVD based in situ etching of β -Ga2O3 using TEGa

Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film

Chemical Etching of Freestanding N-polar GaN in Control of the Surface Morphology

(-310)-oriented β-Ga2O3 grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations

Selective A- or B-site Single Termination on Surfaces of Layered Oxide SrLaAlO4

Atomically control of surface morphology in Ga2O3 epi-layers with high doping activation ratio

Offcut-related step-flow and growth rate enhancement during (100) $β$-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

Step-edge-guided nucleation and growth mode transition of α-Ga 2 O 3 heteroepitaxy on vicinal sapphire