Tuning the Carrier Scattering Mechanism by Rare-Earth Element Doping for High Average zT in Mg 3 Sb 2 -Based Compounds
Kejia Liu,Chen Chen,Xiaofang Li,Jucai Jia,Chengliang Xia,Jun Mao,Quan Huang,Jiehe Sui,Feng Cao,Xingjun Liu,Yue Chen,Qian Zhang
DOI: https://doi.org/10.1021/acsami.1c23395
2022-01-25
Abstract:Mg<sub>3</sub>Sb<sub>2</sub>-based compounds are promising thermoelectric materials because of their excellent thermoelectric performance, low cost, and good mechanical properties. In this work, Er, Dy, Gd, and Nd are all confirmed to be effective n-type dopants for optimizing the carrier concentration, increasing the density of states effective mass, and suppressing the ionized impurity scattering of Mg<sub>3</sub>Sb<sub>2</sub>-based compounds. By increasing the sintering temperature, a larger grain size can be achieved and can effectively improve the carrier mobility in the whole measured temperature range. As a result, maximum <i>zT</i> values above ∼1.6 at 673 K and average <i>zT</i>s above ∼1.0 between 300 and 673 K were achieved for Mg<sub>3.07</sub>Er<sub>0.03</sub>Bi<sub>0.5</sub>Sb<sub>1.5</sub>, Mg<sub>3.07</sub>Dy<sub>0.03</sub>Bi<sub>0.5</sub>Sb<sub>1.5</sub>, and Mg<sub>3.07</sub>Nd<sub>0.03</sub>Bi<sub>0.5</sub>Sb<sub>1.5</sub>. In addition, a high compressive strength of ∼180 MPa was obtained in Mg<sub>3.07</sub>Dy<sub>0.03</sub>Bi<sub>0.5</sub>Sb<sub>1.5</sub>. Therefore, rare-earth element-doped Mg<sub>3</sub>Sb<sub>2</sub>-based compounds are promising for thermoelectric applications.
materials science, multidisciplinary,nanoscience & nanotechnology