Abstract:Since the 1960's when Gordon Moore proposed that the transistor density in our electronic devices should double every two years while the cost is halved, the semiconductor industry has taken this statement to heart. Over the last few decades, no other industry has seen growth even comparably close to that experienced by the semiconductors industry. This has all been made possible by the unbroken string of ingenious breakthroughs by brilliant minds that have been working tirelessly to shrink down transistors. The latest of which is the use of high-k dielectrics and a return to metal gates combined with 3D-transistor architectures. This has been the enabling technology for the transition from the 90 nm node to the 45 nm node, allowing us to shrink our transistors further without losing additional gate control. The fundamental reason for using a high-k gate dielectric compared to SiO2 is that shrinking our gate oxide further, which is already at a few angstroms, is no longer a feasible option to gain additional gate control. High-k dielectric overcome this by exploiting the fundamental physics of capacitors and the materials science of dielectrics to provide a viable option to increase gate control without the need for successively thinner gate oxides. Hafnium Oxide is the most studied and popular of such materials. Its high dielectric constant ~16-25 and interface stability with silicon at operating temperatures make it an ideal candidate for use in current CMOS technology. Despite its deceivingly simple appearance, the processes involved in the fabrication of such high-k HfO2/Si interfaces are full of process subtleties and nuances. In this term paper we hope to explore the physics and materials science of these high-k HfO2/Si interfaces, discussing the challenges and ways to overcome them when it comes to its actual fabrication, and how this ultimately affects our device performance.

Exploration of Novel Hafnium Oxide (HfO2) Based Plasma-Assisted Gate All Around Carbon Nanotube FET (GAA-CNTFET) for High Sensing Applications

Insights into the Design Principle of Heterojunction Ferro Dioxide Charge Plasma Vertical TFET for Biosensing Application

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Impact of High-K Gate Dielectric Materials on Uniformly Doped Dual Gate FinFET for Analog and Digital Applications

Bilayer Organic–Inorganic Gate Dielectrics for High‐Performance, Low‐Voltage, Single‐Walled Carbon Nanotube Thin‐Film Transistors, Complementary Logic Gates, and P–n Diodes on Plastic Substrates

Sub-Nanometer Interfacial Oxides on Highly Oriented Pyrolytic Graphite and Carbon Nanotubes Enabled by Lateral Oxide Growth

Characteristics of sub-1 nm CVD HfO/sub 2/ gate dielectrics with HfN electrodes for advanced CMOS applications

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality

Potential Sensing Application of Oxygen Gas with Charge Plasma Based Negative Capacitance Tunnel FET

Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications

Investigation of Light Doping and Hetero Gate Dielectric Carbon Nanotube Tunneling Field-Effect Transistor for Improved Device and Circuit-Level Performance

Performance Analysis of Double Gate Dielectric Modulation in Schottky FET as Biomolecule Sensor

Charactcristics Of Sub-1 Nm Cvid Hfo2 Gate Dielectrics With Hfn Electrodcs For Advanccd Cmos Applications

An Investigation into the $HfO_2/Si$ Interface: Materials Science Challenges and their Effects on MOSFET Device Performance

Enhanced Analog Performance and High-Frequency Applications of Dielectric Engineered High-K Schottky Nanowire FET

Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance

Charge Plasma Dopingless Device: Boosting High-Frequency Performance with Germanium and Hetero Dielectric Gate

Charge Plasma Doped Heterostructure TFET Biosensor for Diverse Biomolecular Sensing: Theoretical Insights

High-Performance Pentacene Thin-Film Transistor with High- $\kappa$ HfLaON As Gate Dielectric

Design and Analysis of DGDMJL TFET for Biosensing Applications

Selected Topics on HfO/sub 2/ Gate Dielectrics for Future ULSI CMOS Devices