Abstract:Journal of Circuits, Systems and Computers, Ahead of Print. The fabrication complexity and cost associated with nanoscale devices are major concerns. Therefore, to address these challenges, we have introduced a mole fraction-based approach for the sensitivity analysis of a dual material control gate cavity on a source electrically doped polarity-controlled tunnel field effect transistor (DMCG-CS-ED-PC-TFET)-based biosensor for label-free detection of biomolecule species. For this purpose, a polarity bias (electrically doped) of PG-[math][math]V and PG-[math][math]V is applied for the formation of n+ drain and p+ source regions, respectively, over the thin silicon body. The proposed device structure overcomes the random dopant fluctuation issues, thereby avoiding thermal budget and fabrication complexity as compared to the conventional TFET. Moreover, the nanogap cavity is created by etching the appropriate portion at the source side oxide layer. Furthermore, we have applied a dual metal work function (M1 and M2) at the gate electrode along with hetero material [math] at the source side region to improve the sensitivity of the device by varying the mole fraction value (X). The performance of the proposed device has been evaluated in terms of variations in carrier concentration profile, electric field variation, energy band diagram, transfer ([math]) characteristics and the sensitivity in terms of drain current (I[math]), ON-state current (I[math]) and switching ratio (I[math]/I[math]). Furthermore, the sensitivity of the proposed device biosensor has been investigated by considering nanocavity dimensions, practical challenges such as various fill factors, and various step profiles generated from steric hindrance. For this purpose, different neutral biomolecules such as Biotin ([math]), APTES ([math]), Keratin ([math]), Ferrocytochrome C ([math]) and Gelatin ([math]) have been considered in the etched nanocavity region. Additionally, charged biomolecules with positive (negative) charge densities at the oxide semiconductor interface below the nanocavity region have been incorporated to assess the performance of the proposed device using the Silvaco ATLAS device simulator. In this analysis, the proposed biosensor achieves a drain current sensitivity of [math] for neutral biomolecules ([math]), [math] for [math] = [math] cm[math] with [math] and [math] for [math] = [math] cm[math] and [math]. Finally, the performance of the proposed biosensor, DMCG-CS-ED-PC-TFET, exhibits higher sensitivity compared to various existing TFET-based biosensors. Hence, the proposed biosensor exhibits the potential candidate for the development of future sensing bio-equipment.

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