Abstract:Two-dimensional (2D) photodetectors based on semiconducting transitional metal chalcogenides (TMDs) have attracted much attention because of its unique mechanical and opto-electronic properties which can be integrated into nanoscale-sized opto-electronic devices and complex circuits. However, the photodetection range of 2D TMDs materials based detectors are generally limited within the visible range due to its intrinsic relatively large band-gap. In addition, 2D TMDs materials also suffers from weak light absorption inherited from their atomically thin layers, resulting in a photoresponsivity that can be further improved. Herein, by combining 2D MoS2 with zero-dimensional (0D) PbSe quantum dots (QDs) and Au nanocrystals (NCs), a novel 2D-0D photo detector (i.e., MoS2/PbSe@Au) is fabricated. Our MoS2/PbSe@Au photodetector exploits the 2D MoS2 as the conduction channels and PbSe@Au NCs as light sensitizer, which promote the absorption of the entire device and enable appreciable photodetection extending to the near-infrared (NIR). Prominently, the mixed-dimensional photodetector exhibits high responsivity of 1.22 A/W and detectivity of 1.56*10(9) Jones (cm.Hz(1/2).W-1) at NIR (e.g., 1064 nm) compared with the MoS2 photodetector with PbSe QDs only, which are ascribed to the more efficient two-step charge transfer process between PbSe and MoS2 with the presence of Au NCs. We further identify the new carrier multiplication mechanism when comparing the photoresponse of our photodetectors at 405 nm and 635 nm. We found the extremely high EQE of MoS2/PbSe@Au photodetector at the wavelength of 405 nm (268.1%) could be ascribed to the synergism of carrier multiplication (CM) in PbSe QDs and the photo gating effect induced by Au nanoparticles. Our study demonstrates that the novel mixed-dimensional photodetectors based on CVD-grown MoS2 may provide a new route for designing and realizing high-performance optoelectronic devices with harvesting merits of hybrid nanomaterials.

Enhancement of short-wavelength range responsibility for PIN silicon photodetectors using additional fluorescent carbon quantum dots nanoparticles

Enhancement of near ultraviolet spectral range responsibility of silicon photodetectors via additional fluorescent InP/ZnS quantum dots layer

Significant Enhancement of Single-Walled Carbon Nanotube Based Infrared Photodetector Using PbS Quantum Dots

Nano-Oxide-Assisted Si/PbS CQD Heterojunction Photodetectors for Broadband Sensing

Enhancement of Frequency Responsibility of Si PIN-PD Via Additional Red Phosphor Film

Cumulative effect of spectral downshifting, anti-reflection and space-charge region formation in enhancing the spectral response of self-powered silicon photodetectors on sensitisation with CdZnS/ZnS core-shell quantum dots

Enhancing silicon photodetector performance through spectral downshifting using core-shell CdZnS/ZnS and perovskite CsPbBr 3 quantum dots

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Enhanced Visible to Near-Infrared Photodetectors Made from MoS2-based Mixed-Dimensional Structures

Upconversion nanoparticles extending the spectral sensitivity of silicon photodetectors to λ = 1.5 μm

An Ultraviolet‐to‐NIR Broad Spectral Nanocomposite Photodetector with Gain

Synergetic Enhancement of CsPbI3 Nanorods-based High-Performance Photodetectors via PbSe Quantum Dot Interface Engineering

Highly DUV to NIR-II responsive broadband quantum dots heterojunction photodetectors by integrating quantum cutting luminescent concentrators

Silicon-based PbS-CQDs infrared photodetector with high sensitivity and fast response

High-Performance CsPbI3 Quantum Dot Photodetector with a Vertical Structure Based on the Frenkel-Poole Emission Effect

Carbon-silicon based hybrid quantum dot short wave infrared photodetector

Significant performance enhancement of UV-Vis self-powered CsPbBr3 quantum dot-based photodetectors induced by ligand modification and P3HT embedding.

Ultraviolet–visible photodetectors based on surface plasmon-polymer coupled inorganic/organic thin film heterojunction

Organic Amine-Bridged Quasi-2D Perovskite/PbS Colloidal Quantum Dots Composites for High-Gain Near-Infrared Photodetectors