Abstract:Herein, a highly efficient and thermal stability near‐infrared (NIR) phosphor under blue light‐emitting diode is designed. Quantitative and mechanistic studies of the luminescence of neodymium, supported by in‐depth crystal structure analysis, will shed light on the development of novel narrowband NIR phosphors with highly desired properties beyond conventional broadband emission. The prepared narrow‐band NIR LEDs show advantages for biomedical applications. Near‐infrared (NIR) phosphors have been widely used in biomedical applications based on their deep tissue penetration. However, the lack of blue‐pumped NIR phosphors with emission ranges beyond 1000 nm has greatly limited the development of NIR phosphor‐converted light‐emitting diodes (pc‐LEDs). Herein, a facile way to boost the luminescence efficiency and thermal stability by introducing the promoters of Ce3+ and Na+ into Nd3+‐doped SrS NIR phosphor is demonstrated, thus achieving light emitting at 850–1500 nm with a peak wavelength of ≈1070 nm. Through sensitization by the allowed 4f → 5d transition of Ce3+, the SrS: Nd3+ phosphors are excitable by using a commercial blue LED, attributing to the effective energy transfer between Nd3+ and Ce3+. Besides, the structural analysis and density functional theory calculations reveal the lattice distortion mechanism and geometry of doping ions contributed to the weakened thermal quenching effect and the increasing of internal quantum efficiency. The optimized NIR phosphor luminescence intensity remains at 91.8% of the initial intensity at 393 K, and the internal quantum efficiency increases to 42.8% from 31.7% of the sample without Na+ doping. The present exploration of Nd3+‐doped NIR phosphors will provide a reference for designing NIR pc‐LEDs with enhanced properties.

Enhancement of Frequency Responsibility of Si PIN-PD Via Additional Red Phosphor Film

Enhancement of short-wavelength range responsibility for PIN silicon photodetectors using additional fluorescent carbon quantum dots nanoparticles

Enhancement of near ultraviolet spectral range responsibility of silicon photodetectors via additional fluorescent InP/ZnS quantum dots layer

Silicon PIN Photodiode for UV and Blue Spectral Regions

Synergic Effect of N and Se Facilitates Photoelectric Performance in Co-Hyperdoped Silicon

Ultraviolet–visible photodetectors based on surface plasmon-polymer coupled inorganic/organic thin film heterojunction

Enhanced red luminescence of Ca3Si2−xMxO7:Eu3+ (M = Al, P) phosphors via partial substitution of Si4+ for applications in white light-emitting diodes

Cumulative effect of spectral downshifting, anti-reflection and space-charge region formation in enhancing the spectral response of self-powered silicon photodetectors on sensitisation with CdZnS/ZnS core-shell quantum dots

Fabrication and characterization of the red photodetector based on CsPbI3/n-Si heterojunction

Enabling Highly Efficient Neodymium Luminescence for Near‐Infrared Phosphor‐Converted Light‐Emitting Diode Applications

Synergetic Enhancement of CsPbI3 Nanorods-based High-Performance Photodetectors via PbSe Quantum Dot Interface Engineering

Synergic effect of N and Se facilitates photoelectric performance of co-hyperdoped silicon

Design and preparation of high color rendering red inorganic pigment via red light emission phosphor

Cr3+-doped broadband near infrared diopside phosphor for NIR pc-LED

Enhancing silicon photodetector performance through spectral downshifting using core-shell CdZnS/ZnS and perovskite CsPbBr 3 quantum dots

Considerable Photoluminescence Enhancement of LiEu(MoO4)2 Red Phosphors Via Bi And/or Si Doping for White LEDs

Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping

Enhancement of light emission of a low-resistivity silicon nanocrystal thin film: A simulational and experimental study

Responsibility Optimization of a High-Speed InP/InGaAs Photodetector with a Back Reflector Structure.

Enhanced performance of near-infrared- photodetector with PbS-QD-sensitised field-effect transistor

Nano-Oxide-Assisted Si/PbS CQD Heterojunction Photodetectors for Broadband Sensing