Abstract:Silicon (Si) photodetectors do not efficiently capture photons in the UV region: this has been a major impediment to their application in several areas. However, quantum dots (QDs), which convert higher-energy photons into lower-energy photons via spectral downshifting, have emerged as promising candidates for enhancing the UV response of silicon photodetectors. In this study, we investigate the performance of Si photodetectors in the form of sensitized perovskite (CsPbBr 3 ) quantum dots and compare them with core-shell (CdZnS/ZnS) quantum dots for spectral downshifting applications. Using monolithic integration of quantum dots over the silicon photodetector surface, we systematically analyze their electrical and optical characteristics to elucidate the impact of quantum dot structures on device performance. Spectral responsivity measurements reveal a significant enhancement in detector performance over a broad spectral range (300 nm - 1100 nm) after sensitization with quantum dots. Reflectance studies suggest that apart from spectral downshifting, the quantum dot layers act as anti-reflection coatings, contributing to overall performance enhancement. Additionally, current-voltage characteristics indicate the formation of a space charge region at the Si-quantum dot interface, further enhancing device performance. Further opto-electronic testing demonstrates the superior performance and stability of CdZnS/ZnS core-shell QD-sensitized devices compared to perovskite CsPbBr 3 QD-devices. Our study provides valuable insights into the design and optimization of Si photodetectors with improved sensitivity and extended spectral response.

Enhancing silicon photodetector performance through spectral downshifting using core-shell CdZnS/ZnS and perovskite CsPbBr 3 quantum dots

Cumulative effect of spectral downshifting, anti-reflection and space-charge region formation in enhancing the spectral response of self-powered silicon photodetectors on sensitisation with CdZnS/ZnS core-shell quantum dots

Quantum dots enhanced UV response of silicon photodetectors for broadband light detection (Conference Presentation)

Perovskite Quantum Dots Embedded Composite Films Enhancing UV Response of Silicon Photodetectors for Broadband and Solar‐Blind Light Detection

Enhancement of near ultraviolet spectral range responsibility of silicon photodetectors via additional fluorescent InP/ZnS quantum dots layer

High‐performance silicon‐based PbSe-CQDs infrared photodetector

Synergetic Enhancement of CsPbI3 Nanorod-Based High-Performance Photodetectors Via PbSe Quantum Dot Interface Engineering

Synergetic Enhancement of CsPbI3 Nanorods-based High-Performance Photodetectors via PbSe Quantum Dot Interface Engineering

Application of ZnCdS:Mn/ZnS Quantum Dots in Silicon-Based Ultraviolet Detectors

On the Mechanism to Suppress Dark Current Via Blending with an All-Inorganic Perovskite Precursor in Colloidal Quantum Dot Photodetectors

Extremely Efficient Quantum-Cutting Cr3+, Ce3+, Yb3+ Tridoped Perovskite Quantum Dots for Highly Enhancing the Ultraviolet Response of Silicon Photodetectors with External Quantum Efficiency Exceeding 70%

A high-performance photodetector based on a ZnO/CsPbBr3 quantum-dot-level-contact hybrid sandwich structure

Silicon-based PbS-CQDs infrared photodetector with high sensitivity and fast response

On the mechanism to suppress dark current via blending all-inorganic pervoskite precursor for colloidal quantum dots photodetectors

Expanding the Spectral Responsivity of Photodetectors via the Integration of CdSe/ZnS Quantum Dots and MEH−PPV Polymer Composite

Drop-casting CsPbBr3 Perovskite Quantum Dots As Down-Shifting Layer Enhancing the Ultraviolet Response of Silicon Avalanche Photodiode

Achieving High Responsivity and Detectivity in a Quantum-Dot-in-Perovskite Photodetector

Visible-blind ZnMgO Colloidal Quantum Dot Downconverters expand Silicon CMOS Sensors Spectral Coverage into Ultraviolet and enable UV Band Discrimination

Research progress of quantum dot enhanced silicon-based photodetectors

Nano-Oxide-Assisted Si/PbS CQD Heterojunction Photodetectors for Broadband Sensing

Efficient Quantum Cutting of Lanthanum and Ytterbium Ions Co-Doped Perovskite Quantum Dots Towards Improving the Ultraviolet Response of Silicon-Based Photodetectors