Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Improving carrier mobility in two-dimensional semiconductors with rippled materials

Enhancement of Carrier Mobility in Semiconductor Nanostructures by Carrier Distribution Engineering

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Mobility Anisotropy of Two-Dimensional Semiconductors

Two-Dimensional Semiconductors with High Intrinsic Carrier Mobility at Room Temperature

Discovering and Understanding 2D Semiconductors with High Intrinsic Carrier Mobility at Room Temperature

Methods for Improving the Mobility of Semiconductor Carriers

Interplay Between In-Plane and Flexural Phonons in Electronic Transport of Two-Dimensional Semiconductors

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

Two-dimensional Semiconductor Computational Carrier Mobility Genome

Mobility enhancement in heavily doped semiconductors via electron cloaking

Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering

Enhancing Carrier Mobility in Monolayer MoS 2 Transistors with Process-Induced Strain

Contact Optimisation Strategy for Wafer-Scale Field-Effect Transistors Based on Two-Dimensional Semiconductors

Phonon-limited Mobility of 2D Semiconductors: Quadrupole Scattering and Free-carrier Screening

Toward Phonon-Limited Transport in Two-Dimensional Electronics by Oxygen-Free Fabrication

Yttrium-doping-induced metallization of molybdenum disulfide for ohmic contacts in two-dimensional transistors

Long-range electrostatic contribution to electron-phonon couplings and mobilities of two-dimensional and bulk materials

Mobility Enhancement of Strained MoS 2 Transistor on Flat Substrate

Coulomb screening and scattering in atomically thin transistors across dimensional crossover

Giant enhancement of hole mobility for 4H-silicon carbide through suppressing interband electron-phonon scattering