Abstract:In the field of atomically thin 2D materials, oxides are relatively unexplored in spite of the large number of layered oxide structures amenable to exfoliation. There is an increasing interest in ultra-thin film oxide nanostructures from applied points of view. In this perspective paper, recent progress in understanding the fundamental properties of 2D oxides is discussed. Two families of 2D oxides are considered: (1) van der Waals bonded layered materials in which the transition metal is in its highest valence state (represented by V$_2$O$_5$ and MoO$_3$) and (2) layered materials with ionic bonding between positive alkali cation layers and negatively charged transition metal oxide layers (LiCoO$_2$). The chemical exfoliation process and its combinaton with mechanical exfoliation are presented for the latter. Structural phase stability of the resulting nanoflakes, the role of cation size and the importance of defects in oxides are discussed. Effects of two-dimensionality on phonons, electronic band structures and electronic screening are placed in the context of what is known on other 2D materials, such as transition metal dichalcogenides. Electronic structure is discussed at the level of many-body-perturbation theory using the quasiparticle self-consistent $GW$ method, the accuracy of which is critically evaluated including effects of electron-hole interactions on screening and electron-phonon coupling. The predicted occurence of a two-dimensional electron gas on Li covered surfaces of LiCoO$_2$ and its relation to topological aspects of the band structure and bonding is presented as an example of the essential role of the surface in ultrathin materials. Finally, some case studies of the electronic transport and the use of these oxides in nanoscale field effect transistors are presented.

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In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

Room-temperature oxygen transport in nano-thin BixOySez enables precision modulation of 2D materials

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Phonon-limited transport in two-dimensional materials: A unified approach for ab initio mobility and current calculations

Phonon-Limited Transport in 2D Materials: A Unified Approach for ab initio Mobility and Current Calculations

Ab-intio based electron-phonon scattering for 2D materials within the NEGF framework

From lab to fab: path forward for 2D material electronics

Oxide-mediated self-limiting recovery of field effect mobility in plasma-treated MoS$_2$

Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics

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Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor