Abstract:For low-power circuit applications, the performance of the circuit is significantly influenced by the MOSFET's analog/RF and non-linearity properties. Gate-all-around junction-less accumulation mode MOSFETs (JAM) are now the perfect choice for low-power circuit applications. In the present work, the gate-stack engineering method is used for gate-all-around junction-less accumulation mode MOSFET (GSJAM) to improve the analog/RF characteristics. The analog/RF and linearity parameter analyses are numerically performed for a 20 nm channel length gate-all-around gate-stacked junction-less MOSFET using an ATLAS 3D device simulator. The comparative analysis of these analog/RF and linearity parameters is also done. The gate stack engineering shows significant improvements in analog/RF parameters, i.e., trans-conductance (g m ), output resistance (R out ), early voltage (V ea ), intrinsic gain (A V ), trans-conductance frequency product (TFP), gain frequency product (GFP), trans-conductance generation factor (TGF), gain bandwidth product (GBWP), gain trans-conductance frequency product (GTFP), and cut-off frequency (f T ). The results of the simulation investigation show that when GSJM is compared to JAM MOSFET, the values of gm, R out , V ea , and TGF are all 26.37%, 2.24 times, 22.38%, and 20.78% higher, respectively. Also, the gate-stack junction-less MOSFET improves the linearity parameters, i.e., 2nd -order trans-conductance (g m2 ) , 3rd -order trans-conductance (g m3 ), VIP 2 , VIP 3 , IIP 3 , IMD 3 , and 1-dBCP. When comparing GSJAM to JAM MOSFET, the values of VIP2 are 81.63% higher, VIP3 is 1.77 times higher, IIP3 is 6.72 times higher, and 1-dBCP is twice as high. Further, for analog/RF applications, a 20 nm CMOS common-source voltage amplifier circuit using gate-stake junction-less MOSFET has also been designed for a 20 mV and 1 GHz sinusoidal input signal.

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