Increasing the efficiency of perovskite solar cells using Cs4CuSb2Cl12 quantum dots as an interface layer: A numerical study

Musa Çadirci,Melahat Sevgül Bakay

DOI: https://doi.org/10.1177/09544089221134394

2022-11-05

Abstract:Proceedings of the Institution of Mechanical Engineers, Part E: Journal of Process Mechanical Engineering, Ahead of Print. Recently, the advantages of perovskite solar cells (PSCs) and a significant increase in power conversion efficiency (PCE) have played an essential role in the preference for these materials. Although different methods are used to increase PCE and reduce losses at the interfaces in PSCs, placing a new layer between the absorber/hole transfer layer (HTL) or between the absorber/electron transfer layer (ETL) stands out as one of the most common methods. In this study, considering stability, sustainability, mobility, and non-toxicity, Cs4CuSb2Cl12 (CCSC) perovskite quantum dots (PQDs) were preferred as the interface layer between absorber and HTL in CsPbI3 and formamidinium lead iodide (FAPI)-based PSC devices. While SnO2, Cu2O, and nickel were used as ETL, HTL, and back contact, respectively, CsPbI3 and FAPI perovskites were utilized as absorber materials separately. Simulations were conducted on Solar Cell Capacitance Simulator (SCAPS-1D) software and the current density (J) and voltage characteristics were compared. By choosing different interface layer thicknesses, different radiative recombination coefficients (RRCs), and different defect sites, the cell efficiency of the PQD interlayer solar cells were simulated. Simulations were also carried out using different series resistance (Rs) and different shunt resistance (Rsh) values to show the effect of parasitic losses on cell efficiency, and it was observed that device efficiency increased where Rs was low and Rsh was high. In addition, in FAPI-based structure, with the addition of a PQD layer between the absorber and HTL, it was observed that the short circuit current density increased from 17.6 mA/cm2 to 25.67 mA/cm2, while the cell efficiency increased by 30%. Furthermore, according to the results obtained using CsPbI3 as an absorber, adding a PQD layer between CsPbI3 and HTL increased the short circuit current density from 17.8 mA/cm2 to 20.7 mA/cm2 and cell efficiency by 16%. To sum up, these simulation results demonstrate that inserting a PQD layer between the absorber and HTL significantly enhances the efficiency and charge carrier capacity of solar cells.