Design and numerical investigation of CsPbI3/CsSn0.5Ge0.5I3 double‐absorption‐layer heterojunction perovskite solar cells based on SCAPS‐1D

Ao Zhang,Rui Duan
DOI: https://doi.org/10.1002/pssa.202300525
2023-09-19
physica status solidi (a) - applications and materials science
Abstract:CsPbI3 material has obvious advantages in constructing stable all‐inorganic perovskite solar cells (PSCs). However, the wide band gap (1.73 eV) of CsPbI3 cannot effectively absorb low‐energy photons, which seriously hinders its development in single‐junction solar cells. In this study, we constructed a CsPbI3/CsSn0.5Ge0.5I3 double absorption layer heterojunction PSC by SCAPS‐1D. The results show that adding a narrow band gap CsSn0.5Ge0.5I3 absorption layer optimizes the band structure and energy level distribution, enhancing the device's built‐in potential and spectral absorption range. We simulated the combination of different electron transport layers (ETLs), hole transport layers (HTLs), and perovskite layers, ultimately identifying the optimal material for the charge transport layers (CTLs). In addition, the effects of internal factors (Thickness and defect density of the absorption layer, interface defects, and work function of the back electrode) and ambient temperature on the overall performance of the device were investigated. The optimized power conversion efficiency (PCE) of the device (FTO/Cd0.5Zn0.5S/CsPbI3/CsSn0.5Ge0.5I3/CBTS/Au) reaches 31.02 %. This study provides a new attempt at the construction of stable and efficient all‐inorganic heterojunction PSC. This article is protected by copyright. All rights reserved.
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