Abstract:Cu/SiO 2 hybrid bonding presents a promising avenue for achieving high-density interconnects by obviating the need for microbumps and underfills. Traditional copper bonding methods often demand temperatures exceeding 400 °C, prompting recent endeavors to mitigate bonding temperatures through investigations into metal passivation bonding. In this study, we scrutinized the diffusion behavior associated with various metal passivation layers (Platinum, Titanium, Tantalum, and Chromium) in the context of low-temperature direct copper bonding and delved into the essential bonding mechanisms. We observed a deviation from conventional metal–metal bonding factors, such as surface roughness and grain size, in the diffusion behavior. Remarkably, our analysis revealed a pronounced correlation between the crystallinity of the metal passivation layers and diffusion behavior, surpassing the influence of other experimental factors. Subsequent post-bonding examinations corroborated consistent diffusion behavior in Pt and Cr passivation samples with disparate crystallinities, reinforcing the significance of crystallinity in the bonding process. Our findings underscore crystallinity as a pivotal factor governing diffusion behavior, even under varied bonding conditions. These insights are instrumental in achieving exceptional bonding characteristics at lower temperatures in Cu/SiO 2 hybrid bonding. Implications of this study extend to the prospect of advancing highly integrated systems through die-to-wafer bonding, marking a substantial stride toward future applications.

Realizing high-strength diffusion bonding of copper at ultra-low temperatures via single point diamond turning and spark plasma sintering

Unraveling diffusion behavior in Cu-to-Cu direct bonding with metal passivation layers

Low-temperature Cu Cu Direct Bonding with Ultra-Large Grains Using Highly (110)-Oriented Nanotwinned Copper

Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu

Low temperature Cu–Cu direct bonding in air ambient by ultrafast surface grain growth

Low Temperature Cu-Cu Bonding Using Copper Nanoparticles Fabricated by High Pressure Pvd

Study on inhibition of interfacial compounds and improvement of joint properties by low temperature and high-pressure process in diffusion bonding of Ti/Cu

Rapid and low temperature sintering bonding using Cu nanoparticle film for power electronic packaging

Low Temperature Bonding of Metals by Deposition of Nanoparticles at the Interface

Interface Diffusion and Mechanical Properties of ODS-W/Cu Prepared by Spark Plasma Sintering

Thermal conduction and strength of diamond-copper composite sandwich obtained by SPS diffusion bonding with Ti interlayer

Mechanism of Low Temperature Sintering-Bonding Through In-Situ Formation of Silver Nanoparticles Using Silver Oxide Microparticles

Enhanced shear strength and microstructure of Cu–Cu interconnection by low-temperature sintering of Cu nanoparticles

Nanocrystalline copper for direct copper-to-copper bonding with improved cross-interface formation at low thermal budget

Impact-induced bonding process of copper at low velocity and room temperature

Bonding of Cu to Cu bulks through the low temperature sintering of Ag nanoparticle paste

Copper-to-copper direct bonding on highly (111)-oriented nanotwinned copper in no-vacuum ambient

Low-Temperature Cu-Cu Bonding Using Silver Nanoparticles Fabricated by Physical Vapor Deposition

Cu-Cu joint formation by low-temperature sintering of self-reducible Cu nanoparticle paste under ambient condition

Low temperature Cu bonding with large tolerance of surface oxidation