Abstract:In this paper, we propose an ultrascaled WS2 field-effect transistor equipped with a Pd/Pt sensitive gate for high-performance and low-power hydrogen gas sensing applications. The proposed nanosensor is simulated by self-consistently solving a quantum transport equation with electrostatics at the ballistic limit. The gas sensing principle is based on the gas-induced change in the metal gate work function. The hydrogen gas nanosensor leverages the high sensitivity of two-dimensional WS2 to its sur-rounding electrostatic environment. The computational investigation encompasses the nanosensor's behavior in terms of potential profile, charge density, current spectrum, local density of states (LDOS), transfer characteristics, and sensitivity. Additionally, the downscaling-sensitivity trade-off is analyzed by considering the impact of drain-to-source voltage and the electrostatics parameters on subthreshold performance. The simulation results indicate that the downscaling-sensitivity trade-off can be optimized through enhancements in electrostatics, such as utilizing high-k dielectrics and reducing oxide thickness, as well as applying a low drain-to-source voltage, which also contributes to improved energy efficiency. The proposed nanodevice meets the prerequisites for cutting-edge gas nanosensors, offering high sensing performance, improved scaling capability, low power consumption, and complementary metal–oxide–semiconductor compatibility, making it a compelling candidate for the next generation of ultrascaled FET-based gas nanosensors.

Influence of gridded gate structure on gas sensing behavior of hydrogen

Design and Investigation of Double Gate Field Effect Transistor Based H2 Gas Sensor Using Ultra-Thin Molybdenum Disulfide

Hydrogen-Induced Effect on Device Performance of a Pd/GaAs-Based Heterostructure Field-Effect Transistor

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Design of Pentacene Thin-Film Transistor Based Hydrogen Gas Sensor with High-K Dielectric Materials for High Sensitivity

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Highly Sensitive Hydrogen Sensor Based on a New Suspended Structure of Cross-Stacked Multiwall Carbon Nanotube Sheet

The Impact of Gate Recess on the H2 Detection Properties of Pt-AlGaN/GaN HEMT Sensors

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CMOS Compatible Hydrogen Sensor Using Platinum Gate and ALD-Aluminum Oxide

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Hydrogen Sensing Properties of FET-Type Sensors with Pt-In2O3 at Room Temperature

Sub-10 Parts Per Billion Detection of Hydrogen with Floating Gate Transistors Built on Semiconducting Carbon Nanotube Film

Hydrogen Sensors Based On Pt-Algan/Gan Back-To-Back Schottky Diode

High-temperature Hydrogen Sensor Based on Platinum Nanoparticle-Decorated SiC Nanowire Device

WS2 Nanosheet-Based Ultrascaled Field-Effect Transistor for Hydrogen Gas Sensing: Addressing the Sensitivity-Downscaling Trade-Off

Ultrafine Pt nanoparticles deposited on SiC nanosheets achieved by wet impregnation for enhanced high-temperature hydrogen gas sensing

Hydrogen Sensors Based on Ni/Sio2/Si Mos Capacitors

Field Effect Transistors with Semiconductor-sensitized Gate for High-sensitivity Hydrogen Detection

Hydrogen detecting characteristics of a palladium nanoparticle/indium gallium oxide based sensor