Abstract:Metastable (Ti,Al)N thin films with face-centered cubic (fcc) structure are widely applied to protect tools and components used in the machining industry for their high hardness and exceptional thermal stability. Alloying is a simple but powerful strategy to further improve the performance of (Ti,Al)N thin films. Here, the combination of experiments and ab initio calculations allowed us to further improve the mechanical properties, thermal stability, and oxidation resistance of arc-evaporated (Ti,Al)N films through the addition of Nb and Ta. The developed Ti 0.40 Al 0.53 Nb 0.07 N, Ti 0.34 Al 0.52 Nb 0.14 N, Ti 0.40 Al 0.53 Ta 0.07 N, and Ti 0.34 Al 0.50 Ta 0.16 N thin films show a single-phase fcc structure like Ti 0.46 Al 0.54 N. While the hardness ( H ) of as-deposited (Ti,Al,Nb)N thin films is similar to that of Ti 0.46 Al 0.54 N (30.1 ± 0.4 GPa), it increases to 33.2 ± 0.7 and 34.1 ± 1.1 GPa by alloying with 7 and 16 at.% Ta (metal fraction), respectively. Both alloying elements allow to retard the spinodal decomposition of (Ti,Al)N, as suggested by X-ray diffraction of vacuum-annealed samples. The (Ti,Al)N and (Ti,Al,Nb)N samples exhibit the onset of wurtzite (w-) AlN formation at ~1050 °C, which is postponed to ~1200 °C for the (Ti,Al,Ta)N thin films. Ab initio calculations suggest that age hardening of (Ti,Al)N is improved by Nb and Ta, with Nb being more effective than Ta. This is verified by experiments showing that Ti 0.40 Al 0.53 Nb 0.07 N (Ti 0.34 Al 0.52 Nb 0.14 N) and Ti 0.40 Al 0.53 Ta 0.07 N (Ti 0.34 Al 0.50 Ta 0.16 N) experience an increase of H to 34.7 ± 0.5 GPa (36.7 ± 0.7 GPa) and 35.8 ± 1.0 GPa (37.0 ± 1.1 GPa) when annealed at 1000 °C, compared to the 32.4 ± 0.7 GPa of Ti 0.46 Al 0.54 N annealed at 900 °C. The relative H increase is thus higher for (Ti,Al,Nb)N than for (Ti,Al,Ta)N. Furthermore, Nb and Ta also improve the oxidation resistance of (Ti,Al)N with Ta being more effective than Nb. Based on these results we can conclude that both Nb and Ta elements improve hardness, thermal stability, and oxidation resistance of (Ti,Al)N, with Nb providing more relative hardness gain but Ta providing higher absolute values.

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Preparation and Characterization of High-Entropy Alloy (TaNb)$_{1-x}$(ZrHfTi)$_x$ Superconducting Films

Penetration depth and critical fields in superconducting NbTi thin films grown by co-sputtering at room temperature

Ambient Temperature Growth and Superconducting Properties of Ti-V Alloy Thin Films

Preparation of Nb 3 Al Superconductor by Powder Metallurgy and Effect of Mechanical Alloying on the Phase Formation

Controlling the Superconducting Critical Temperature and Resistance of NbN Films through Thin Film Deposition and Annealing

Formation of superconductive supersaturated TaZr solid solutions by pulsed electron beam treatment

Growth and superconductivity of niobium titanium alloy thin films on strontium titanate (001) single-crystal substrates for superconducting joints

Studies of high temperature superconducting thin films by transmission electron microscopy

Superconductivity in thermally annealed Ta-Nb-Hf-Zr-Ti high-entropy alloys

Cryogenic growth of tantalum thin films for low-loss superconducting circuits

Properties of Nb\_xTi\_{(1-x)}N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits

Aluminothermic preparation of Hf–Ta and Nb–10Hf–1Ti alloys and their characterization

Crystallographic Structure Analysis of a Ti–Ta Thin Film Materials Library Fabricated by Combinatorial Magnetron Sputtering

Ab initio supported development of Nb- and Ta-alloyed (Ti,Al)N thin films with improved thermal stability

Structural transitions in superconducting NbTiN thin films

Electron beam evaporation of superconductor-ferromagnet heterostructures

alpha-Ta Films on c-plane Sapphire with Enhanced Microstructure

Doubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilms

In-depth S/TEM observation of Ti–Hf and Ta–Hf-doped Nb3Sn layers

Properties of NbxTi(1-x)N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits.