Abstract:The thermal reliability of two different high-power insulated gate bipolar transistor (IGBT) modules was studied under both conduction and switching regimes by experimental and numerical approaches. Indeed, the reliability of semiconductor devices is tightly linked to the junction temperatures reached in the IGBT, which is a function of the diode chips present in such devices and its operating condition. However, measurements of the semiconductor temperatures are often difficult to be done, thus requiring modeling and simulation tools to accurately evaluate the instantaneous temperature under different thermal loads. For this reason, a transient 3D heat transfer numerical model of two different IGBT power devices was proposed using the Finite Element Method, assuming that heat is dissipated on the IGBT by natural convection and radiation. These simulations were validated with experimental measurements, obtained through infrared thermography, performed for the IGBT modules either opened or enclosed, varying the heat source, the module orientation and under conduction or switching regime. For the switching regime, power losses due to the gate-closing and gate-opening transitions between conducting and non-conducting states were taken into consideration. The heat losses were modeled assuming the time-dependent heat dissipation obtained by previous electrical simulations, and it was compared with time-averaged heat source solutions. Results showed that averaging the heat source can significantly reduce the computational time, allowing quick design explorations. Overall, the numerical model led to deviations of less than 16% over the transient heating and at steady-state. Finally, the impact of a heat sink attached to the IGBT was studied, demonstrating that the proposed model can be used for accurate and quick investigations of potential failures and for the development of more efficient IGBT devices.

Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems

Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems

Survey on Fault-Tolerant Techniques for Power Electronic Converters

Fault Analysis and Fault-Tolerant Design for Parallel Redundant Inverter Systems in Case of IGBT Short-Circuit Failures

Study of Accelerated Power Cycling Test of IGBT Power Modules

An Improved Transient Electro-Thermal Model for Paralleled IGBT Modules

Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches

A Review on IGBT Module Failure Modes and Lifetime Testing

Enhance Reliability of Semiconductor Devices in Power Converters

Modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability

Modern IGBT Gate Driving Methods for Enhancing Reliability of High-Power Converters - an Overview.

Impact Of The Thermal-Interface-Material Thickness On Igbt Module Reliability In The Modular Multilevel Converter

A Critical Fault-Tolerant Inverter Based on Internal Evolutionary Short-Circuit Failure Mechanism of IGBT Module

Thermal Management on IGBT Power Electronic Devices and Modules

Advanced Design Tools for the Reliability of Power Electronics - Case Studies on a Photovoltaic (PV) System.

Thermal and electrical evaluation of insulated gate bipolar transistor (IGBT) power modules

Lifetime estimation of IGBT module using square-wave loss discretization and power cycling test

Fault prediagnosis of power electronic devices in urban new energy system

Research on performance parameter degradation of high voltage and high power IGBT module in power cycling test