Structure of the Copper–Enriched Layer Introduced by Anodic Oxidation of Copper-Containing Aluminium Alloy

T. Hashimoto,X. Zhou,P. Skeldon,G.E. Thompson
DOI: https://doi.org/10.1016/j.electacta.2015.01.133
IF: 6.6
2015-10-01
Electrochimica Acta
Abstract:This paper investigates the structure of the copper–enriched layer formed at the alloy/anodic film interface during anodizing of Al–2wt.% Cu binary alloy using transmission electron microscopy. It was revealed that θ′ phase was formed within the copper–enriched layer. For the copper–enriched layer formed on {100} aluminum planes, the interface between the aluminum matrix and the θ′ phase within the copper-enriched layer is coherent. For the copper–enriched layer formed on {110} and {111} aluminum planes, the interfaces between the aluminum matrix and the θ′ phase within the copper-enriched layer are semi-coherent or incoherent. The interfacial coherency influences the formation of oxygen gas bubbles within the resultant anodic films.
electrochemistry
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