Abstract:Edge structure and stability are crucial in determining both the morphology and the growth behaviours of hexagonal boron nitride (h-BN) domains in chemical vapour deposition (CVD) growth under near thermal equilibrium conditions. In this study, various edges of h-BN on three typical transition metal surfaces used for h-BN's CVD growth, Cu(111), Ni(111) and Rh(111), are explored with density functional theory calculations. Different from that in vacuum, our study shows that the formation of non-hexagonal rings, such as pentagon, heptagon or their pairs, is energetically not preferred and both zigzag (ZZ) edges are more stable than the armchair (AC) edge on all the explored catalyst surfaces under typical conditions of h-BN's CVD growth, which explains the broad experimental observation of triangular h-BN domains. More importantly, our results indicate that, instead of the pristine ZZ edge terminated with nitrogen atoms (ZZN), the triangular BN domains observed in experiments are likely to be enclosed with ZZ Klein edges having dangling atoms, ZZB + N or ZZN + B. By applying the theory of Wulff construction, we predicted that the equilibrium shape of a BN domain could be a hexagon enclosed with nitrogen-rich AC edges, triangles enclosed with two different types of ZZ Klein edges or a hexagon enclosed with boron-rich AC edges if the growth is in a N-rich, neutral or B-rich environment, respectively. This study presents how the edges and equilibrium shapes of h-BN domains can be controlled during the CVD synthesis and provides guidelines for further exploring the growth behaviours and improving the quality of CVD-prepared h-BN films.

Carbon-rich hexagonal (BN)C alloys

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Morphology, Ordering, Stability, and Electronic Structure of Carbon‐Doped Hexagonal Boron Nitride

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Hard Three-Dimensional BN Framework with One-Dimensional Metallicity

Hyperhoneycomb Boron Nitride With Anisotropic Mechanical, Electronic, And Optical Properties

Non-phase-separated 2D B-C-N Alloys Via Molecule-Like Carbon Doping in 2D BN: Atomic Structures and Optoelectronic Properties.

Large wafer-level two-dimensional h-BN with unintentional carbon doping grown by metalorganic chemical vapor deposition

Investigation on the Microstructure and Optical Properties of C-Axis Oriented Nanocrystalline Hexagonal Bn Films Fabricated by Hot-Filament Chemical Vapor Deposition

Electrical homogeneity of large-area chemical vapor deposited multilayer hexagonal boron nitride sheets

Engineering the electronic bandgaps and band edge positions in carbon-substituted 2D boron nitride: a first-principles investigation

Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

Structural Determination of a Graphite/Hexagonal Boron Nitride Superlattice Observed in the Experiment.

Bandgap Characteristics of Boron-Containing Nitrides—Ab Initio Study for Optoelectronic Applications

Aligned carbon-doping to modulate thermal and electrical conductivity of boron carbon nitride grown from chemical vapor deposition

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Bandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlN

Hexagonal Boron Nitride Growth on Cu-Si Alloy: Morphologies and Large Domains.