Abstract:Boron nitride (BN) is a material with outstanding technological promise because of its exceptional thermochemical stability, structural, electronic and thermal conductivity properties, and extreme hardness. Yet, the relative thermodynamic stability of its most common polymorphs (diamond-like cubic and graphite-like hexagonal) has not been resolved satisfactorily because of the crucial role played by kinetic factors in the formation of BN phases at high temperatures and pressures (experiments), and by competing bonding, electrostatic and many-body dispersion forces in BN cohesion (theory). This lack of understanding hampers the development of potential technological applications, and challenges the boundaries of fundamental science. Here, we use high-level first-principles theories that correctly reproduce all important electronic interactions (the adiabatic-connection fluctuation-dissipation theorem in the random phase approximation) to estimate with unprecedented accuracy the energy differences between BN polymorphs, and thus overcome the accuracy hurdle that hindered previous theoretical studies. We show that the ground-state phase of BN is cubic and that the frequently observed hexagonal polymorph becomes entropically stabilized over the cubic at temperatures slightly above ambient conditions ($T_{\rm c \to h} = 335 \pm 30$ K). We also reveal a low-symmetry monoclinic phase that is extremely competitive with the other low-energy polymorphs and which could explain the origins of the experimentally observed "compressed h-BN" phase. Our theoretical findings therefore should stimulate new experimental efforts in bulk BN as well as promote the use of high-level theories in modelling of technologically relevant van der Waals materials.

Morphology, Ordering, Stability, and Electronic Structure of Carbon‐Doped Hexagonal Boron Nitride

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Carbon-rich hexagonal (BN)C alloys

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

The influence of carbon on polytype and growth stability of epitaxial hexagonal boron nitride films and layers

Structural Determination of a Graphite/Hexagonal Boron Nitride Superlattice Observed in the Experiment.

Atomistic insights into the nucleation and growth of hexagonal boron nitride and graphene heterostructures

Substitutional carbon doping of free-standing and Ru-supported BN sheets: A first-principles study.

Stability and Electronic Structure of Two Dimensional Cx(BN)y Compound

Hexagonal Boron Nitride Growth on Cu-Si Alloy: Morphologies and Large Domains.

Novel Boron Nitride Polymorphs with Graphite-Diamond Hybrid Structure

Phase Stability of Hexagonal/Cubic Boron Nitride Nanocomposites

Polymorphism of Bulk Boron Nitride

Non-phase-separated 2D B-C-N Alloys Via Molecule-Like Carbon Doping in 2D BN: Atomic Structures and Optoelectronic Properties.

The Stability Prediction and Epitaxial Growth of Boron Nitride Nanodots on Different Substrates

Revealing the nucleation mechanism of CVD-prepared hexagonal boron nitride on transition metal surfaces: A study from DFT calculations