Diamond electronics with high carrier mobilities

Moshe Tordjman

DOI: https://doi.org/10.1038/s41928-021-00707-5

IF: 33.255

2022-01-01

Nature Electronics

Abstract:Field-effect transistors based on heterojunctions of hydrogen-terminated diamond and hexagonal boron nitride can offer surface carrier mobilities as high as 680 cm2 V–1 s–1.

engineering, electrical & electronic

What problem does this paper attempt to address?

High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric

Yosuke Sasama,Katsuyoshi Komatsu,Satoshi Moriyama,Masataka Imura,Tokuyuki Teraji,Kenji Watanabe,Takashi Taniguchi,Takashi Uchihashi,Yamaguchi Takahide

DOI: https://doi.org/10.1063/1.5055812

IF: 6.6351

2018-11-01

APL Materials

Abstract:Diamond is a wide bandgap semiconductor that can work at high temperatures and resist very high electric fields. It endures harsh environments through its physical stability and conducts heat very well. These properties make diamond suitable for the fabrication of unique electronic devices. In particular, diamond field effect transistors (FETs) have promising applications, including high-power converters for trains and electric vehicles and high-power high-frequency amplifiers for telecommunications and radar. Although high mobility is desirable for these applications, it has been difficult to achieve in diamond FETs particularly when the carrier density is high. The low mobility is most probably due to fixed and trapped charges in the non-ideal amorphous gate dielectric and at the dielectric/diamond interface. Here, we report on diamond FETs with monocrystalline hexagonal boron nitride (h-BN) as a gate dielectric. Thanks to the low density of charged impurities in monocrystalline h-BN, we obtained unprecedentedly high mobilities (>300 cm2 V−1 s−1) for moderately high carrier densities (>5 × 1012 cm−2). The resulting minimum sheet resistance was exceptionally low (<3 kΩ). Our results show that a heterostructure consisting of monocrystalline h-BN and diamond is an excellent platform with which to manufacture high-performance electronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors

Yosuke Sasama,Taisuke Kageura,Katsuyoshi Komatsu,Satoshi Moriyama,Jun-ichi Inoue,Masataka Imura,Kenji Watanabe,Takashi Taniguchi,Takashi Uchihashi,Yamaguchi Takahide

DOI: https://doi.org/10.1063/5.0001868

IF: 2.877

2020-05-14

Journal of Applied Physics

Abstract:Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation. We recently fabricated diamond FETs with a hexagonal-boron-nitride gate dielectric and observed a high mobility above <math> 300 cm 2 V − 1 s − 1</math>. In this study, we identify the scattering mechanism that limits the mobility of our FETs through theoretical calculations. Our calculations reveal that dominant carrier scattering is caused by surface charged impurities with a density of <math> ≈ 1 × 10 12 cm − 2</math> and suggest that an increase in mobility over <math> 1000 cm 2 V − 1 s − 1</math> is possible by reducing these impurities.

physics, applied
High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures

Yosuke Sasama,Taisuke Kageura,Masataka Imura,Kenji Watanabe,Takashi Taniguchi,Takashi Uchihashi,Yamaguchi Takahide

DOI: https://doi.org/10.48550/arXiv.2102.05982

2021-02-11

Materials Science

Abstract:Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the poor performance of p-channel transistors compared with that of n-channel transistors has constrained the production of energy-efficient complimentary circuits with integrated n- and p-channel transistors. The p-type surface conductivity of hydrogen-terminated diamond offers great potential for solving this problem, but surface transfer doping, which is commonly believed to be essential for generating the conductivity, limits the performance of transistors made of hydrogen-terminated diamond because it requires the presence of ionized surface acceptors, which cause hole scattering. Here, we report on fabrication of a p-channel wide-bandgap heterojunction field-effect transistor consisting of a hydrogen-terminated diamond channel and hexagonal boron nitride ($h$-BN) gate insulator, without relying on surface transfer doping. Despite its reduced density of surface acceptors, the transistor has the lowest sheet resistance ($1.4$ k$\Omega$) and largest on-current ($1600$ $\mu$m mA mm$^{-1}$) among p-channel wide-bandgap transistors, owing to the highest hole mobility (room-temperature Hall mobility: $680$ cm$^2$V$^{-1}$s$^{-1}$). Importantly, the transistor also shows normally-off behavior, with a high on/off ratio exceeding $10^8$. These characteristics are suited for low-loss switching and can be explained on the basis of standard transport and transistor models. This new approach to making diamond transistors paves the way to future wide-bandgap semiconductor electronics.
High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures

Yosuke Sasama,Taisuke Kageura,Masataka Imura,Kenji Watanabe,Takashi Taniguchi,Takashi Uchihashi,Yamaguchi Takahide

DOI: https://doi.org/10.1038/s41928-021-00689-4

IF: 33.255

2021-12-23

Nature Electronics

Abstract:Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and are important for power and high-frequency electronics. However, wide-bandgap p-channel transistors perform poorly compared with n-channel ones, making complimentary circuits difficult to achieve. Hydrogen-terminated diamond is a potential p-type material for such devices, but surface transfer doping—thought to be required to generate conductivity—limits performance because it requires ionized surface acceptors that can lead to hole scattering. Here we show that p-channel wide-bandgap heterojunction field-effect transistors can be created, without surface transfer doping, using a hydrogen-terminated diamond channel and hexagonal boron nitride gate insulator. Despite having a reduced density of surface acceptors, the transistors have a low sheet resistance (1.4 kΩ) and large ON current (1,600 μm mA mm−1) compared with other p-channel wide-bandgap transistors, due to a high room-temperature Hall mobility (680 cm2 V−1 s−1). The transistors also exhibit normally OFF behaviour with an ON/OFF ratio of 108.

engineering, electrical & electronic
High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Dianzhong Wu,Zhiyong Zhang,Danhui Lv,Guoli Yin,Zhijian Peng,Chuanhong Jin

DOI: https://doi.org/10.1166/mex.2016.1289

2016-01-01

Materials Express

Abstract:Monolayer MoS2 with large area and high quality are grown using chemical vapor deposition (CVD) on Si/SiO2 substrate, the triangle grain size is about 50 mu m, and top-gated field-effect transistors (FETs) were fabricated using atomic layer deposition (ALD) grown HfO2 at low temperature as high-k gate insulator. The transistors present typical n-type field-effect properties, especially with high carrier mobility up to about 36.4 cm(2)/Vs, which is the highest value of mobility of top gated transistors based on CVD-derived single layer MoS2. Two kinds of methods were used to extract mobility from the measured properties of FETs, and the consistent results indicated the retrieved mobility was reliable. In addition an inverter circuit with gain larger than 1 was constructed based on the n-type FETs.
High mobility hydrogen-terminated diamond FET with h-BN gate dielectric using pickup method

Yan Huang,Junfeng Xiao,Ran Tao,Zhi Liu,Yiran Mo,Xinxin Yu,Zhengyi Cao,Yun Wu,Zhonghui Li,Haolin Wang,Lei Wang

DOI: https://doi.org/10.1063/5.0165596

IF: 4

2023-09-11

Applied Physics Letters

Abstract:Hydrogen-terminated diamond surfaces, emerging as a promising two-dimensional (2D) electron platform with great thermal and electronic properties, hold great potential for the next-generation high power and high frequency field effect transistor (FET). However, ideal gate dielectrics with high crystallinity and defect-free surfaces are still largely elusive. In this work, using the contamination-free pickup transfer method, hexagonal boron nitride (h-BN) flakes were fabricated on top of the hydrogen-terminated diamond surface to serve as a gate material and the passivation layer. The morphological and optical characterizations revealed the formation of homogeneous and intimate interface between h-BN and diamond. Benefiting from the h-BN gate dielectric layer, the maximum drain current density, subthreshold swing, and on/off ratio of diamond FET are measured to be −210.3 mA mm−1, 161 mV/dec, and 106, respectively. Especially, the transport measurement shows an almost constant Hall mobility of around 260 cm2 V−1 s−1 in the hole density range of 2 − 6 × 1012 cm−2, suggesting the excellent gate controllability of h-BN. Our results indicate that h-BN could form high-quality interface with hydrogen-terminated diamond, paving the way for the development of diamond-based electronic applications.

physics, applied
High elastic moduli, controllable bandgap and extraordinary carrier mobility in single-layer diamond

Ting Cheng,Zhongfan Liu,Zhirong Liu

DOI: https://doi.org/10.1039/d0tc03253k

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:Very recently, fluorinated single-layer diamond (called diamane) was successfully prepared for the first time through the conversion of bilayer graphene in a mild way using a chemical vapor deposition approach, which is stable under ambient atmosphere. Herein, we performed in-depth first-principles calculations on fluorinated and hydrogenated diamane. Our calculations reveal that fluorinated diamane is an ultrathin material with a direct-wide bandgap at the Gamma-point, which is 3.86 eV larger than that of hydrogenated diamane, when using the G(0)W(0)method. Such a bandgap could be effectively modulated by applying external strains or introducing fluorine vacancy defects. Besides, their elastic moduli are comparable to that of graphene and higher than those of most other 2D materials. The ideal tensile strength is dictated by soft-mode phonon instability under uniaxial tension and elastic instability under biaxial strain. Most surprisingly, we found that the calculated electron mobility (2732 cm(2)V(-1)s(-1)) and hole mobility (1565 cm(2)V(-1)s(-1)) in these two diamond-like monolayers are superior to those of III-V semiconductor compounds. Finally, the Raman-active phonon frequencies were characterized to serve as a fingerprint for the experimentally obtained high-quality diamane. These features will provide these materials with great potential for future applications in nano-optics, nanoelectronics, and nano-electromechanical systems.
Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator

Yosuke Sasama,Takuya Iwasaki,Mohammad Monish,Kenji Watanabe,Takashi Taniguchi,Yamaguchi Takahide

DOI: https://doi.org/10.1063/5.0224192

IF: 4

2024-08-26

Applied Physics Letters

Abstract:Diamond electronic devices have attracted significant interest owing to their excellent semiconducting properties. We recently demonstrated that eliminating surface-transfer doping enhances carrier mobility and achieves normally off behavior in diamond field-effect transistors (FETs) with a hexagonal boron nitride (h-BN) gate insulator. In our previous study, the gate electrode was overlapped onto the source/drain electrodes to prevent the increase in access resistance caused by excluding surface-transfer doping. However, it is known that gate overlap increases parasitic capacitance and gate leakage current. In this study, we developed a technique for self-aligning the gate electrode with the edge of h-BN using oblique-angle deposition. The diamond FET with a self-aligned gate electrode exhibits optimal FET characteristics, including high mobility of ≈ 400 cm2V−1s−1, low sheet resistance of 2.4 kΩ, and output characteristics demonstrating pinch-off behavior. Furthermore, the capacitance-voltage characteristics clearly indicate distinct ON and OFF states, validating the efficacy of this technique. This method enables the fabrication of diamond/h-BN FETs with no gate overlap and without increasing access resistance, making it a promising approach for developing high-speed, low-loss diamond FETs with a wide range of applications.

physics, applied
High performance ionic-liquid-gated air doped diamond field-effect transistors

Bo Hsu,Sidra Farid,Joseph Averion-Puttrich,Anirudha V Sumant,Michael A Stroscio,Mitra Dutta

DOI: https://doi.org/10.1088/1361-6528/abd0b6

IF: 3.5

2021-03-26

Nanotechnology

Abstract:We report successful fabrication of high performance ion-gated field-effect transistors (FETs) on hydrogenated diamond surface. Investigations on the hydrogen (H)-terminated diamond by Hall effect measurements shows Hall mobility as high as ∼200 cm2 V-1 s-1. In addition we demonstrate a rapid fabrication scheme for achieving stable high performance devices useful for determining optimal growth and fabrication conditions. We achieved H-termination using hydrogen plasma treatment with a sheet resistivity as low as ∼1.3 kΩ/sq. Conductivity through the FET channel is studied as a function of bias voltage on the liquid ion-gated electrode from -3.0 to 1.5 V. Stability of the H-terminated diamond surface was studied by varying the substrate temperature up to 350 °C. It was demonstrated that the sheet resistance and carrier densities remain stable over 3 weeks in ambient air atmosphere even at substrate temperatures up to 350 °C, whereas increasing temperature beyond this limit has effected hydrogenation. This study opens new avenues for carrying out fundamental research on diamond FET devices with ease of fabrication and high throughput.
Phonon- and defect-limited electron and hole mobility of diamond and cubic boron nitride: A critical comparison

Nocona Sanders,Emmanouil Kioupakis

DOI: https://doi.org/10.1063/5.0056543

IF: 4

2021-08-09

Applied Physics Letters

Abstract:Diamond and cBN are two of the most promising ultra-wide bandgap semiconductors for applications in high-power high-frequency electronic devices. Despite extensive studies on carrier transport in these materials, there are large discrepancies in their reported carrier mobilities. In this work, we investigate the phonon- and dopant-limited electron and hole mobilities of cBN and diamond with atomistic first-principles calculations in order to understand their fundamental upper bounds to carrier transport. Our results show that although the phonon-limited electron mobilities are comparable between cBN and diamond, the hole mobility is significantly lower in cBN due to its heavier hole effective mass. Moreover, although lattice scattering dominates the mobility at low doping, neutral impurity scattering becomes the dominant scattering mechanism at higher dopant concentrations due to the high dopant ionization energies. Our analysis provides critical insights and reveals the intrinsic upper limits to the carrier mobilities of diamond and cBN as a function of doping and temperature for applications in high-power electronic devices.

physics, applied
Theoretical Study on Carrier Mobility of Hydrogenated Graphene/Hexagonal Boron-Nitride Heterobilayer

Zhenqiang Ye,Hua Geng,Xiaoping Zheng

DOI: https://doi.org/10.1186/s11671-018-2780-2

2018-01-01

Nanoscale Research Letters

Abstract:Hydrogenated graphene (HG)/hexagonal boron nitride (h-BN) heterobilayer is an ideal structure for the high-performance field effect transistor. In this paper, the carrier mobilities of HG/h-BN heterobilayer are investigated based on the first-principles calculations by considering the influence of stacking pattern between HG and h-BN, hydrogen coverage and hydrogenation pattern. With the same hydrogenation pattern, the electron mobility monotonously decreases when the hydrogen coverage increases. With the same hydrogen coverage, different hydrogenation patterns lead to significant changes of mobility. For 25% and 6.25% HGs, the μe (ΓK) of 25% pattern I is 8985.85 cm2/(V s) and of 6.25% pattern I is 23,470.98 cm2/(V s), which are much higher than other patterns. Meanwhile, the h-BN substrate affects the hole mobilities significantly, but it has limit influences on the electron mobilities. The hole mobilities of stacking patterns I and II are close to that of HG monolayer, but much lower than that of stacking patterns III and IV.
High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Meiyong Liao,Huanying Sun,Satoshi Koizumi

DOI: https://doi.org/10.1002/advs.202306013

IF: 15.1

2024-01-21

Advanced Science

Abstract:N‐channel diamond MOSFETs based on electronic grade phosphorous‐doped diamond are demonstrated. The MOSFET has the highest field‐effect electron mobility among all the wide‐bandgap semiconductors at high temperatures. This work enables the development of energy‐efficient and high‐reliability CMOS integrated circuits for high‐power electronics, integrated spintronics, and extreme sensors under harsh environments. Diamond holds the highest figure‐of‐merits among all the known semiconductors for next‐generation electronic devices far beyond the performance of conventional semiconductor silicon. To realize diamond integrated circuits, both n‐ and p‐channel conductivity are required for the development of diamond complementary metal‐oxide‐semiconductor (CMOS) devices, as those established for semiconductor silicon. However, diamond CMOS has never been achieved due to the challenge in n‐type channel MOS field‐effect transistors (MOSFETs). Here, electronic‐grade phosphorus‐doped n‐type diamond epilayer with an atomically flat surface based on step‐flow nucleation mode is fabricated. Consequently, n‐channel diamond MOSFETs are demonstrated. The n‐type diamond MOSFETs exhibit a high field‐effect mobility around 150 cm2 V−1 s−1 at 573 K, which is the highest among all the n‐channel MOSFETs based on wide‐bandgap semiconductors. This work enables the development of energy‐efficient and high‐reliability CMOS integrated circuits for high‐power electronics, integrated spintronics, and extreme sensors under harsh environments.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

Xiaohua Zhu,Siwu Shao,Siyi Chan,Juping Tu,Kosuke Ota,Yabo Huang,Kang An,Liangxian Chen,Junjun Wei,Jinlong Liu,Chengming Li,Hiroshi Kawarada

DOI: https://doi.org/10.1002/aelm.202201122

IF: 6.2

2023-01-26

Advanced Electronic Materials

Abstract:This work presents an excellent metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on a diamond substrate derived from a five‐inch (110) highly preferred polycrystalline diamond film. Forty‐four percentage of devices show normally‐off operation with a maximum current density of 400 mA mm−1, while 56% of devices demonstrate normally‐on operation with a maximum current density of 525 mA mm−1. Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the instability of the electrical conductivity. This work presents a metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on a diamond substrate derived from a five‐inch (110) highly preferred polycrystalline diamond film. The MOSFETs with excellent performance are fabricated by combining an H‐terminated channel and an epitaxially grown boron‐doped layer as the source/drain contacts of the diamond devices. According to the electrical statistical results of ≈110 devices on the polycrystalline diamond substrate, 44% of devices show normally‐off operation with a maximum current density of 400 mA mm−1, while 56% of devices demonstrate normally‐on operation with a maximum current density of 525 mA mm−1. The normally‐off characteristics are more related to the higher amounts of nitrogen concentration than the grain boundaries. The stable boron‐doped source and drain provide a high concentration of holes, which facilitate transport in the surface p‐type channel induced by the H‐termination. The characteristics of the MOSFETs are inspiring for the fabrication of complementary inverter circuits on large diamond wafers.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Widely tunable carrier mobility of boron nitride-embedded graphene.

Jinying Wang,Ruiqi Zhao,Zhongfan Liu,Zhirong Liu

DOI: https://doi.org/10.1002/smll.201202978

IF: 13.3

2013-01-01

Small

Abstract:The carrier transport in boron nitride-embedded graphene (BNG) is studied using density functional theory coupled with the Boltzmann transport equation. Under a phonon scattering mechanism, the intrinsic carrier mobility of BNG at room temperature is tunable from 1.7 x 103 to 1.1 x 105 cm2 V1 s1 when the bandgap is between 0.38 and 1.39 eV. Some specific BNG materials even show ultrahigh mobility up to 6.6 x 106 cm2 V1 s1, and the transport polarity (whether it is electron or hole transport) can be tailored by the application of a uniaxial strain. The wide mobility variation of BNG is attributed to the dependence of the effective mass and the deformation potential constant on the carbon concentration and width. The results indicate that BNG can have both a large onoff ratio and high carrier mobility and is thus a promising material for electronic devices.
Topological Mott transistor with high current density based on hydrogen-terminated diamond

Hyun-Tak Kim,M. M. Qazilbash

DOI: https://doi.org/10.1063/5.0177628

IF: 4

2023-12-25

Applied Physics Letters

Abstract:The mechanism for the high drain-source current density, IDS≈ 1.3 A/mm, measured in a field effect transistor based on hydrogen-terminated diamond, is explained by the Mott insulator-metal transition (IMT). A local metal phase satisfying the Mott criterion for an IMT occurs in a p-type semiconductor formed by coupling between hydrogen and carbon on the surface of diamond. The local Mott metal phase on the surface of a p-type semiconductor leads to high carrier and current densities, and the transistor utilizing this effect is construed as a Mott power transistor. A channel material consisting of local Mott metal regions on the surface of a p-type semiconductor, such as hydrogen-terminated diamond, may be considered an inhomogeneous, topological Mott insulator.

physics, applied
Electronic properties of c-BN/diamond heterostructures for high-frequency high-power applications

Jeffrey T. Mullen,James A. Boulton,Minghao Pan,Ki Wook Kim

2023-10-11

Abstract:Using first principles calculations, this work investigates the suitability of diamond/c-BN heterojunctions for high frequency, high power device applications. The key quantities of band offsets and interface charge polarization are examined for different crystallographic orientations [(110), (111), or (100)], bond terminations (C-B or C-N), and substrates (diamond or c-BN). The results indicate that both the (111) and (100) structures with polar interfaces are likely to be a type-I alignment with the diamond conduction and valence band extrema nested within the c-BN bandgap, whereas the non-polar (110) counterpart may form type II as the valence band of c-BN is shifted down substantially lower. The (111) and (100) structures also show net charge polarization in a narrow region at the interface. The electron-deficient and electron-rich nature of the C-B and C-N bonding are found to induce charge redistribution leading to an essentially 2D sheet of negative and positive polarization. With the predicted band alignments suitable for carrier confinement as well as the possibility of the modulation and polarization doping, the diamond/c-BN heterostructures are a promising candidate for high-performance electronic devices with a highly conductive 2D channel. Both p-type and n-type devices appear possible with a judicious choice of the heterojunction configuration.

Materials Science
Two-dimensional Ambipolar Carriers of Giant Density at the Diamond/cubic-BN (111) Interfaces: Toward Complementary Logic and Quantum Applications

Jiaduo Zhu,Kai Su,Zeyang Ren,Yao Li,J. F. Zhang,Jincheng Zhang,Lixin Guo,Yue Hao

DOI: https://doi.org/10.1039/d3cp03702a

IF: 3.3

2023-09-29

Physical Chemistry Chemical Physics

Abstract:The extremely difficult ambipolar doping activation greatly hinders the outstanding performance of the diamond for electronic devices. The main concern has been devoted to surface conduction by two-dimensional (2D) carriers. 2D hole gas (2DHG) in the diamond is induced by surface transfer doping dominated by the adsorbate's status and faces stability issues. Meanwhile, a feasible way to generate the other essential ambipolar carrier—2D electron gas (2DEG) is still lacking. We propose that the well-lattice-matched diamond/c-BN (111) interfaces can spontaneously induce 2D ambipolar carriers with a giant density of 4.17×10 14 /cm 2 , an order higher than other competitors. 2DEG and 2DHG can be separately achieved near the hetero-interfaces consisting of C-N and C-B bonds, respectively. Interestingly, the robust 2D charges are derived from a novel bulk-induced polarization-discontinuity at the interfaces, which can be attributed to an unexpected non-zero formal polarization of centrosymmetric c-BN along [111] direction. The existence of 2D ambipolar carriers at the diamond/c-BN (111) interfaces has resolved the missing n-type conduction in diamond, thus opening up possibilities for complementary logic applications. Additionally, the high density of quantum-confined 2D ambipolar carriers provides an excellent platform for strongly-correlated systems, which could lead to novel quantum information processing applications.

chemistry, physical,physics, atomic, molecular & chemical
Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate

Qingzhong Gui,Zhen Wang,Chunmin Cheng,Xiaoming Zha,John Robertson,Sheng Liu,Zhaofu Zhang,Yuzheng Guo

DOI: https://doi.org/10.1063/5.0117263

IF: 4

2022-11-22

Applied Physics Letters

Abstract:Diamond has compelling advantages in power devices as an ultrawide-bandgap semiconductor. Using first-principles calculations, we systematically investigate the structural and electronic properties of hydrogen-terminated diamond (H-diamond) (111) van der Waals (vdW) heterostructures with graphite and hexagonal boron nitride (h-BN) layers. The graphite/H-diamond heterostructure forms a p-type ohmic contact and the p-type Schottky barrier decreases as the number of graphite layers increases. In contrast, the h-BN/H-diamond heterostructure exhibits semiconducting properties and a tunable type-II band alignment. Moreover, the charge transfer is concentrated at the interface with a large amount of charge accumulating on the C–H bonds on the H-diamond (111) surface, indicating the formation of a highly conductive two-dimensional hole gas (2DHG) layer. In a similar vein, the promising structural and electronic properties of graphite, h-BN, and H-diamond (111) in the graphite/h-BN/H-diamond (111) vdW heterostructure are well preserved upon their contact, while such heterostructure exhibits flexible band offset and Schottky contacts. These studies of interface engineering for H-diamond heterostructures are expected to advance the application of 2D materials in H-diamond field effect transistors, which is an important development in the design of surface transfer doping for 2DHG H-diamond devices.

physics, applied
Field‐Effect Transistors: A Cofacially Stacked Electron‐Deficient Small Molecule with a High Electron Mobility of over 10 Cm2 V−1 S−1 in Air (adv. Mater. 48/2015)

Jin‐Hu Dou,Yu‐Qing Zheng,Ze‐Fan Yao,Ting Lei,Xingxing Shen,Xu‐Yi Luo,Zhi‐Ao Yu,Shi‐Ding Zhang,Guangchao Han,Zhi Wang,Yuanping Yi,Jie‐Yu Wang,Jian Pei

DOI: https://doi.org/10.1002/adma.201570334

IF: 29.4

2015-01-01

Advanced Materials

Abstract:Compared with abundant p-type organic semiconductors with high mobilities, n-type semiconductors with mobilities over 1 cm2 V−1 s−1 are rare. On page 8051, Y. Yi, J. Pei, and co-workers report a new small molecule, F4-BDOPV, with unprecedentedly high electron mobilities of up to 12.6 cm2 V−1 s−1. This is the first time that air-stable n-type organic semiconductors have shown mobilities surpassing 10 cm2 V−1 s−1, an important benchmark for practical applications.
High carrier mobility on hydrogen terminated ⟨100⟩ diamond surfaces

B. Rezek,H. Watanabe,C. E. Nebel

DOI: https://doi.org/10.1063/1.2168497

IF: 4

2006-01-23

Applied Physics Letters

Abstract:An increase in carrier mobility from typical values around 100 to more than 300cm2∕Vs at room temperature is detected on hydrogenated undoped ⟨100⟩ diamond layers after annealing at 400 K in a vacuum. As a function of temperature in the range 400 to 125 K the high mobility followed tendencies remarkably close ionized impurity (toward low temperatures) and phonon scattering (toward high temperatures). As a function of annealing time, the high mobility increased with the time constant of about 6.8 h in the range of 1–16 h. A prerequisite for obtaining the largest increase in mobility was optimized surface cleanness. Exposing the samples to air resulted in a complete recovery of the original values of mobility, hole concentration, and conductivity after several days. The data are discussed in terms of interactions between holes in the surface conductive channel and adsorbates on the surface.

physics, applied

Diamond electronics with high carrier mobilities

High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric

Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors

High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures

High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

High mobility hydrogen-terminated diamond FET with h-BN gate dielectric using pickup method

High elastic moduli, controllable bandgap and extraordinary carrier mobility in single-layer diamond

Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator

High performance ionic-liquid-gated air doped diamond field-effect transistors

Phonon- and defect-limited electron and hole mobility of diamond and cubic boron nitride: A critical comparison

Theoretical Study on Carrier Mobility of Hydrogenated Graphene/Hexagonal Boron-Nitride Heterobilayer

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

Widely tunable carrier mobility of boron nitride-embedded graphene.

Topological Mott transistor with high current density based on hydrogen-terminated diamond

Electronic properties of c-BN/diamond heterostructures for high-frequency high-power applications

Two-dimensional Ambipolar Carriers of Giant Density at the Diamond/cubic-BN (111) Interfaces: Toward Complementary Logic and Quantum Applications

Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate

Field‐Effect Transistors: A Cofacially Stacked Electron‐Deficient Small Molecule with a High Electron Mobility of over 10 Cm2 V−1 S−1 in Air (adv. Mater. 48/2015)

High carrier mobility on hydrogen terminated ⟨100⟩ diamond surfaces