Modeling of apparent activation energy and lifetime estimation in NAND flash memory

Kyunghwan Lee,Myounggon Kang,Yuchul Hwang,Hyungcheol Shin
DOI: https://doi.org/10.1088/0268-1242/30/12/125006
IF: 2.048
2015-10-30
Semiconductor Science and Technology
Abstract:Misunderstanding apparent activation energy (E aa ) can cause serious error in lifetime predictions. In this paper, the E aa is investigated for sub 20 nm NAND flash memory. In a high-temperature (HT) regime, the interface trap (N it ) recovery mechanism has the greatest impact on the charge loss. However, the values of E aa and E a(Nit) have a wide difference. Also, the lifetime of the device cannot be estimated by the Arrhenius model due to the E aa roll-off behavior. For the first time, we reveal the origin of abnormal characteristics on E aa and derive a mathematical formula for E aa as a function of each E a(mechanism) in NAND flash memory. Using the proposed E aa equation, the accurate lifetime for the device is estimated.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
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