Abstract:Confined microexplosions induced in silicon by powerful ultrashort laser pulses can lead to new Si phases. Some of these have not previously been observed via near-equilibrium compression of silicon. In this study, confocal Raman micro-spectroscopy and Raman imaging of arrays of microexplosions have been conducted to search for Raman signatures of these novel allotropes of silicon. A microexplosion is generated at the interface between a thick silicon dioxide confinement layer and underlying silicon. It is characterised by a void at the interface above a region of compressed silicon. Raman data show a rich assembly of silicon phases within the modified silicon. Residual stresses up to 4.5 GPa in the modifications have been determined from the shift in the main diamond-cubic Si Raman peak. The computed Raman spectra for a number of Si allotropes show reasonable agreement with the experimental spectra. Two structurally similar tetragonal phases of silicon (the rhombohedral r8 and the body-centred bc8) phases as well as recently identified bt8-Si are all highly likely to be contained in Raman spectra from many laser-modified sites. Although the st12-Si phase, previously observed in our electron diffraction studies of the highly compressively stressed laser-modified regions, was not reliably identified from Raman data, we suggest this could be due to the possible difference in residual stress level in the sites analysed by the electron diffraction and Raman spectra. Several other unidentified Raman peaks were observed, suggesting the presence of other unknown silicon phases. All of these silicon phases are expected to have attractive semiconducting properties including narrow band gap that open up novel applications.

Time-Resolved Micro-Raman Stress Spectroscopy for Single-Crystal Silicon Resonators Using a MEMS Optical Chopper

Micro-Raman spectroscopy measurement of stress in silicon

Discussion on the optical-coupling in silicon optical-type micromechanical sensors

A Novel Structure of All-Optical Type Silicon Microresonator

The Optical Excitation of Silicon Microresonator

Micro-Raman Spectroscopy Analysis of Residual Stress in Polysilicon MEMS Resonators

Dynamic Operational Stress Measurement of MEMS Using Time-Resolved Raman Spectroscopy

Resonant Optical Properties of Crystalline Silicon Nanoparticles Fabricated by Laser Ablation-Based Methods

Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy

Indirect stress and air-cavity displacement measurement of MEMS tunable VCSELs via micro-Raman and micro-photoluminescence spectroscopy

Research of optically excited and interrogated silicon resonators

A Nondestructive Raman Spectra Stress 2D Analysis for the Pressure Sensor Sensitive Silicon Membrane

Micro-Raman measurement of thickness in microelectromechanical silicon structures

Micro-Raman spectroscopy of ultrashort laser induced microexplosion sites in silicon

Two-dimensional stress measurement of a micromachined piezoresistive structure with micro-Raman spectroscopy

Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon

Raman Stress Measurement of Crystalline Silicon Desensitizes Shear Stress: Only on {001} Crystal Plane

Automatic Pico Laser Trimming System for Silicon MEMS Resonant Devices Based on Image Recognition

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Efficient Raman Lasing and Raman-Kerr Interaction in an Integrated Silicon Carbide Platform